Zirconium-doped hafnium oxide high-k dielectrics with subnanometer equivalent oxide thickness by reactive sputtering
Overview
Research
Identity
Additional Document Info
Other
View All
Overview
abstract
Ultrathin zirconium-doped hafnium oxide high dielectric constant films, e.g., with an equivalent oxide thickness less than 1 nm, have been prepared by high-power sputtering and low oxygen content annealing conditions on the p-type Si(100) substrate. The influence of the process conditions on the film's material and electrical properties were investigated with X-ray photoelectron spectroscopy analysis and electrical measurements. The low equivalent oxide film also shows a small charge trapping density, a low leakage current density, and a moderate interface state density. This is a viable gate dielectric film for future complementary metal oxide semiconductor devices. 2007 The Electrochemical Society.
