Zirconium-doped hafnium oxide high-k dielectrics with subnanometer equivalent oxide thickness by reactive sputtering Academic Article uri icon

abstract

  • Ultrathin zirconium-doped hafnium oxide high dielectric constant films, e.g., with an equivalent oxide thickness less than 1 nm, have been prepared by high-power sputtering and low oxygen content annealing conditions on the p-type Si(100) substrate. The influence of the process conditions on the film's material and electrical properties were investigated with X-ray photoelectron spectroscopy analysis and electrical measurements. The low equivalent oxide film also shows a small charge trapping density, a low leakage current density, and a moderate interface state density. This is a viable gate dielectric film for future complementary metal oxide semiconductor devices. 2007 The Electrochemical Society.

published proceedings

  • ELECTROCHEMICAL AND SOLID STATE LETTERS

altmetric score

  • 7

author list (cited authors)

  • Yan, J., Kuo, Y., & Lu, J.

citation count

  • 40

complete list of authors

  • Yan, Jiong||Kuo, Yue||Lu, Jiang

publication date

  • January 2007