Zirconium-Doped Hafnium Oxide High-k Dielectrics with Subnanometer Equivalent Oxide Thickness by Reactive Sputtering
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Ultrathin zirconium-doped hafnium oxide high dielectric constant films, e.g., with an equivalent oxide thickness less than 1 nm, have been prepared by high-power sputtering and low oxygen content annealing conditions on the p-type Si(100) substrate. The influence of the process conditions on the film's material and electrical properties were investigated with X-ray photoelectron spectroscopy analysis and electrical measurements. The low equivalent oxide film also shows a small charge trapping density, a low leakage current density, and a moderate interface state density. This is a viable gate dielectric film for future complementary metal oxide semiconductor devices. © 2007 The Electrochemical Society.
author list (cited authors)
Yan, J., Kuo, Y., & Lu, J.