Nonphotosensitive, Vertically Redundant Two‐Channel a‐Si:H Thin Film Transistor
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An amorphous silicon a-Si:H thin film transistor (TFT), which has (i) two separate channels vertically stacked, (ii) two gate electrodes, i.e., one on the top and the other one at the bottom, and (iii) a self-aligned source/drain to bottom gate structure, is presented and studied. This TFT is not sensitive to light illumination because the channels are enclosed by two opaque gate electrodes. It has an Ioffless than 10-12A, an Ion/Ioffratio greater than 106, and a subthreshold slope of 0.42 V/decade. When both gate electrodes are driven, the value of Ionis higher than the sum of the two separate values of Ioncorresponding to each gate electrode driven individually. The high performance of the two-channel TFT is due to the field enhancement from both the top and the bottom gates.
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