Nonvolatile Memories Based on Nanocrystalline Zinc Oxide Embedded Zirconium-doped Hafnium Oxide Thin Films Conference Paper uri icon

abstract

  • Memory devices containing nanocrystalline ZnO embedded Zrdoped HfO2 high-k dielectric films have been prepared and characterized. The memory effect was manifested by the large counterclockwise capacitance-voltage hysteresis, e.g., 1.22V at {plus minus}6V gate bias, and negative differential resistance region in the positive bias current-voltage range. The maximum trapped charge density of 6.43 1012cm-2 was obtained after -9V +9V -9V sweeps. The memory effects were mainly caused by electron trapping at low bias voltage. A large memory operation window, e.g., 0.90 V, with a long charge retention time, e.g., > 36,000s, was achieved under the proper gate stress voltage. It is a viable dielectric for future nano-size metal oxide semiconductor field effect transistors and capacitors.

published proceedings

  • ECS Transactions

author list (cited authors)

  • Lu, J., Lin, C., & Kuo, Y.

citation count

  • 4

complete list of authors

  • Lu, Jiang||Lin, Chen-Han||Kuo, Yue

publication date

  • September 2007