Electrical and material characteristics of the sub 5 nm hafnium doped tantalum oxide high K film Conference Paper

abstract

• Ultra-thin films (less than 5nm) of hafnium doped tantalum oxide (Hf-doped TaOx) high-k dielectric films were deposited by reactive sputtering as alternative gate dielectric materials for future CMOS devices. A film with an equivalent oxide thickness (EOT) of 13 and a leakage current density of 7_10-3A/cm2 at -1 V relative to the flat-band voltage has been obtained. The Hf-doped TaOx film is composed of HfOx and TaOx. The binding energy of Ta 4f in the film shifts to a lower value with the inclusion of the Hf in the film due to charge transfer among elements. The Hf-doped film remains amorphous after 700C N2 or O2 annealing. The N2 annealed film has a lower EOT, a thinner interfacial layer, and a higher leakage current than the O2 annealed film. 2004 IEEE.

name of conference

• 4th IEEE Conference on Nanotechnology, 2004.

authors

• Kuo, Yue

published proceedings

• 2004 4TH IEEE CONFERENCE ON NANOTECHNOLOGY

author list (cited authors)

• Lu, J., & Kuo, Y.

citation count

• 0

complete list of authors

• Lu, J||Kuo, Y

publication date

• January 2004

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

keywords

• Hf-doped Taox
• Hfo2
• High K
• Ta2o5
• Thin Film Oxide

Digital Object Identifier (DOI)

• 10.1109/nano.2004.1392360

International Standard Book Number (ISBN) 10

• 0-7803-8536-5

start page

• 389

end page

• 391

URL

• http://dx.doi.org/10.1109/nano.2004.1392360