Hafnium-doped tantalum oxide high-k dielectrics with sub-2 nm equivalent oxide thickness
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Hafnium-doped tantalum oxide high dielectric constant films, i.e., with an equivalent oxide thickness as low as 1.3 nm, have been prepared and studied. The doped film has a bulk layer dielectric constant greater than 28 and an interface layer (formed with silicon substrate) dielectric constant greater than 8. The doping process changed the bulk and the interface layer structures as well as energy band gaps. The postdeposition annealing atmosphere showed major impacts on material and electrical properties. The new high- k material is a viable gate dielectric film for future metal-oxide-semiconductor transistors. © 2005 American Institute of Physics.
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