Effects of interfacial charges on doped and undoped Hfo x stack layer with TiN metal gate electrode for nano-scaled CMOS generation
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abstract
A comparison of the interfacial charges present in the high-k stacked gate dielectrics for Zr-doped HfO x and undoped HfO x samples with titanium nitride (TiN) metal gate electrode is reported here. The metal gate work function value (4.31 eV) for TiN gate electrode was extracted from the TiN/SiO 2 /p-Si capacitor. The calculated charge densities in both doped and undoped films are of the order of 10 12 cm -2. The interfacial charge present in the high-k/SiO 2 interface is negative for ALD deposited pure HfO 2 samples; where as the charges are positive for RF-sputter deposited pure HfO 2 and Zr-doped HfO x samples. The existence of positive interface charges may be due to the fabrication process. 2011 SumDU.
