Breakdown phenomena of zirconium-doped hafnium oxide high-k stack with an inserted interface layer Academic Article uri icon

abstract

  • Two-step breakdown is observed on a zirconium-doped hafnium oxide film with a hafnium silicate interface layer. The high-k stack has an equivalent oxide thickness of ∼1.7 nm. It is found that defect accumulation in the interface region triggers breakdown of the stack subjected to gate injection. © 2006 American Institute of Physics.

author list (cited authors)

  • Luo, W., Yuan, T., Kuo, Y., Lu, J., Yan, J., & Kuo, W.

citation count

  • 25

publication date

  • August 2006