Breakdown phenomena of zirconium-doped hafnium oxide high-k stack with an inserted interface layer

Two-step breakdown is observed on a zirconium-doped hafnium oxide film with a hafnium silicate interface layer. The high-k stack has an equivalent oxide thickness of 1.7 nm. It is found that defect accumulation in the interface region triggers breakdown of the stack subjected to gate injection. 2006 American Institute of Physics.

Breakdown phenomena of zirconium-doped hafnium oxide high-k stack with an inserted interface layer Academic Article