Breakdown phenomena of zirconium-doped hafnium oxide high-k stack with an inserted interface layer
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Two-step breakdown is observed on a zirconium-doped hafnium oxide film with a hafnium silicate interface layer. The high-k stack has an equivalent oxide thickness of ∼1.7 nm. It is found that defect accumulation in the interface region triggers breakdown of the stack subjected to gate injection. © 2006 American Institute of Physics.
author list (cited authors)
Luo, W., Yuan, T., Kuo, Y., Lu, J., Yan, J., & Kuo, W.