Breakdown phenomena of zirconium-doped hafnium oxide high-k stack with an inserted interface layer Academic Article

abstract

• Two-step breakdown is observed on a zirconium-doped hafnium oxide film with a hafnium silicate interface layer. The high-k stack has an equivalent oxide thickness of 1.7nm. It is found that defect accumulation in the interface region triggers breakdown of the stack subjected to gate injection.

authors

• Kuo, Yue
• Luo, Wen

published proceedings

• APPLIED PHYSICS LETTERS

author list (cited authors)

• Luo, W., Yuan, T., Kuo, Y., Lu, J., Yan, J., & Kuo, W.

citation count

• 25

complete list of authors

• Luo, Wen||Yuan, Tao||Kuo, Yue||Lu, Jiang||Yan, Jiong||Kuo, Way

publication date

• August 2006

publisher

• AIP Publishing  Publisher

published in

• Applied Physics Letters  Journal

keywords

• 40 Engineering
• 4018 Nanotechnology

Digital Object Identifier (DOI)

• 10.1063/1.2335624

start page

• 072901

end page

• 072901

volume

• 89

issue

• 7

URL

• http://dx.doi.org/10.1063/1.2335624