Large Area Plasma Enhanced Chemical Vapor Deposition of Nonstoichiometric Silicon Nitride Conference Paper

abstract

• ABSTRACTThis paper presents results on PECVD of low refractive index silicon nitride in a large area system. Film deposition characteristics, suchas deposition rate and thickness uniformity, were investigated over awide range of process parameters, such as gas composition, power, pressure, and N2 pressure. Film properties, such as RI, absorbance, stress, and etch rate, have also been studied. A general model, which includes both the deposition and etching mechanisms, has been developed to explain these results. This model could explain the film uniformity issue in the process.

authors

• Kuo, Yue

published proceedings

• MRS Advances

author list (cited authors)

• Kuo, Y.

citation count

• 8

complete list of authors

• Kuo, Yue

publication date

• January 1992

publisher

• Springer Nature  Publisher

published in

• MRS Online Proceedings Library  Journal

keywords

• 40 Engineering
• 4014 Manufacturing Engineering

Digital Object Identifier (DOI)

• 10.1557/proc-282-623

International Standard Book Number (ISBN) 10

• 1558991778

start page

• 623

end page

• 629

volume

• 282

URL

• http://dx.doi.org/10.1557/proc-282-623