Enhancement of SSI-LED Light Emission by Embedding CdS in the Zr-doped HfO2 High-k Film Conference Paper

abstract

• The Electrochemical Society. Light emission improvement of the solid state incandescent light emitting devices by embedding CdS into the Zr-doped Hfo2 high-k dielectric has been studied. Compared with the capacitor with the Zr-doped Hfo2 gate dielectric, the CdS embedded sample have: 1) higher defect densities in bulk and interface layers, 2) a smaller breakdown strength, 3) a larger leakage current, 4) more light emission dots, and 5) a higher light emission intensity. The spectrum shape and color of the emitted light were influenced by the inclusion of CdS in the high-i stack. The light emission efficiency was also enhanced. The improvement might be caused by the change of the nano-resistor composition. In summary, the embedding of CdS influences the high-k stack's physical properties, which affects the formation of nano-resistors and the device's light emission characteristics.

authors

• Kuo, Yue

published proceedings

• NANOSCALE LUMINESCENT MATERIALS 5

author list (cited authors)

• Zhang, S., & Kuo, Y.

citation count

• 1

complete list of authors

• Zhang, Shumao||Kuo, Yue

publication date

• April 2018

publisher

• The Electrochemical Society  Publisher

published in

• ECS Transactions  Journal

Digital Object Identifier (DOI)

• 10.1149/08503.0053ecst

International Standard Book Number (ISBN) 13

• 978-1-62332-496-4

start page

• 53

end page

• 58

volume

• 85

issue

• 3

URL

• http://dx.doi.org/10.1149/08503.0053ecst