Temperature Effects on Charge Transfer Mechanisms of nc-ITO Embedded ZrHfO High-k Nonvolatile Memory Devices Conference Paper

abstract

• ABSTRACTThe nanocrystalline ITO embedded Zr-doped HfO2 high-k dielectric thin film has been made into MOS capacitors for nonvolatile memory studies. The devices showed large charge storage densities, large memory windows, and long charge retention times. In this paper, authors investigated the temperature effect on the charge transport and reliability of this kind of device in the range of 25C to 125C. The memory window increased with the increase of the temperature. The temperature influenced the trap and detrap of not only the deeply-trapped but also the loosely-trapped charges. The device lost its charge retention capability with the increase of the temperature. The Schottky emission relationship fitted the device in the positive gate voltage region. However, the Frenkel-Poole mechanism was suitable in the negative gate voltage region.

authors

• Kuo, Yue

published proceedings

• MRS Advances

author list (cited authors)

• Yang, C., Kuo, Y., Lin, C., & Kuo, W.

citation count

• 3

complete list of authors

• Yang, Chia-Han||Kuo, Yue||Lin, Chen-Han||Kuo, Way

publication date

• December 2011

publisher

• Springer Nature  Publisher

published in

• MRS Advances  Journal

keywords

• 40 Engineering
• 4016 Materials Engineering

Digital Object Identifier (DOI)

• 10.1557/opl.2011.1068

International Standard Book Number (ISBN) 13

• 9781605113142

start page

• 108

end page

• 33

volume

• 1337

issue

• 1

URL

• http%3A%2F%2Fdx.doi.org%2F10.1557%2Fopl.2011.1068