HR job title
- Associate Professor
- Contact Info
- 1 979 845 7441
Harris, Rusty Associate Professor
Positions
- Associate Professor, Electrical and Computer Engineering, College of Engineering
My research interests incluse CMOS and Silicon technology, materials integration, novel electrical and physical device and materials characterization, III-V and nanophotonics, self-assembled nanotechnology, and Supercritical Fluid Processing and Deposition.
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Overview
Publications
selected publications
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academic article
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Alkhatib, I., Amaral, D., Aralis, T., Aramaki, T., Arnquist, I. J., Ataee Langroudy, I., ... SuperCDMS Collaboration.
(2021).
Constraints on Lightly Ionizing Particles from CDMSlite. Physical Review Letters.
127(8), 081802.
-
Alkhatib, I., Amaral, D., Aralis, T., Aramaki, T., Arnquist, I. J., Ataee Langroudy, I., ... SuperCDMS Collaboration.
(2021).
Light Dark Matter Search with a High-Resolution Athermal Phonon Detector Operated above Ground. Physical Review Letters.
127(6), 061801.
-
Amaral, D. W., Aralis, T., Aramaki, T., Arnquist, I. J., Azadbakht, E., Banik, S., ... Zheng, L.
(2020).
Constraints on low-mass, relic dark matter candidates from a surface-operated SuperCDMS single-charge sensitive detector. Physical Review D.
102(9), 091101.
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Aralis, T., Aramaki, T., Arnquist, I. J., Azadbakht, E., Baker, W., Banik, S., ... Zheng, L.
(2020).
Constraints on dark photons and axionlike particles from the SuperCDMS Soudan experiment. Physical Review D.
101(5), 052008.
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Agnese, M. R., Aralis, T., Aramaki, T., Arnquist, I. J., Azadbakht, E., Baker, W., ... Zhao, X.
(2019).
Search for low-mass dark matter with CDMSlite using a profile likelihood fit. Physical Review D.
99(6), 062001.
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Agnese, R., Aralis, T., Aramaki, T., Arnquist, I. J., Azadbakht, E., Baker, W., ... Zhao, X.
(2019).
Production rate measurement of Tritium and other cosmogenic isotopes in Germanium with CDMSlite. Astroparticle Physics.
104, 1-12.
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Agnese, R., Aralis, T., Aramaki, T., Arnquist, I. J., Azadbakht, E., Baker, W., ... Zhao, X.
(2018).
First Dark Matter Constraints from a SuperCDMS Single-Charge Sensitive Detector. Physical Review Letters.
121(5), 051301.
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Yamamoto, A. Y., Sundqvist, K. M., Li, P., & Harris, H. R.
(2018).
Simulation of a Multidimensional Input Quantum Perceptron. Quantum Information Processing.
17(6), 128.
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Agnese, R., Aramaki, T., Arnquist, I. J., Baker, W., Balakishiyeva, D., Banik, S., ... SuperCDMS Collaboration.
(2018).
Results from the Super Cryogenic Dark Matter Search Experiment at Soudan. Physical Review Letters.
120(6), 061802.
-
Agnese, R., Anderson, A. J., Aralis, T., Aramaki, T., Arnquist, I. J., Baker, W., ... Zhao, X.
(2018).
Low-mass dark matter search with CDMSlite. Physical Review D.
97(2), 022002.
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Agnese, R., Aralis, T., Aramaki, T., Arnquist, I. J., Azadbakht, E., Baker, W., ... Zhao, X.
(2018).
Energy loss due to defect formation from Pb-206 recoils in SuperCDMS germanium detectors. Applied Physics Letters.
113(9), 092101-092101.
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Agnese, R., Anderson, A. J., Aramaki, T., Baker, W., Balakishiyeva, D., Banik, S., ... Zhao, X.
(2018).
Nuclear-recoil energy scale in CDMS II silicon dark-matter detectors. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
905, 71-81.
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Agnolet, G., Baker, W., Barker, D., Beck, R., Carroll, T. J., Cesar, J., ... Yadavalli, S. A.
(2017).
Background studies for the MINER Coherent Neutrino Scattering reactor experiment. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
853, 53-60.
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Berber, F., Johnson, D. W., Sundqvist, K. M., Piner, E. L., Huff, G. H., & Harris, H. R.
(2017).
RF Dielectric Loss Due to MOCVD Aluminum Nitride on High Resistivity Silicon. IEEE Transactions on Microwave Theory and Techniques.
65(5), 1465-1470.
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Agnese, R., Anderson, A. J., Aramaki, T., Arnquist, I., Baker, W., Barker, D., ... Zhao, X.
(2017).
Projected sensitivity of the SuperCDMS SNOLAB experiment. Physical Review D.
95(8), 082002.
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Mirabolfathi, N., Harris, H. R., Mahapatra, R., Sundqvist, K., Jastram, A., Serfass, B., Faiez, D., & Sadoulet, B.
(2017).
Toward single electron resolution phonon mediated ionization detectors. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
855, 88-91.
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Agnese, R., Anderson, A. J., Aramaki, T., Asai, M., Baker, W., Balakishiyeva, D., ... SuperCDMS Collaboration.
(2016).
New Results from the Search for Low-Mass Weakly Interacting Massive Particles with the CDMS Low Ionization Threshold Experiment. Physical Review Letters.
116(7), 071301.
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Jastrama, A., Harris, H. R., Mahapatra, R., Phillips, J., Platt, M., Prasad, K., ... Upadhyayula, S.
(2016).
Cryogenic Dark Matter Search detector fabrication process and recent improvements (vol 772, pg 14, 2015). Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
820, 172-172.
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Suh, J. W., Babb, M. E., Principe, E. L., & Harris, H. R.
(2016).
Mask registration and lithography platform portability for nitride fin-based field effect transistors prototyping. Journal of Vacuum Science and Technology B.
34(6), 06k602-06K602.
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Agnese, R., Anderson, A. J., Asai, M., Balakishiyeva, D., Barker, D., Thakur, R. B., ... Zhang, J.
(2015).
Improved WIMP-search reach of the CDMS II germanium data. Physical Review D: Particles, Fields, Gravitation and Cosmology.
92(7), 072003.
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Schneck, K., Cabrera, B., Cerdeno, D. G., Mandic, V., Rogers, H. E., Agnese, R., ... Zhang, J.
(2015).
Dark matter effective field theory scattering in direct detection experiments. Physical Review D: Particles, Fields, Gravitation and Cosmology.
91(9), 092004.
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Agnese, R., Anderson, A. J., Balakishiyeva, D., Basu Thakur, R., Bauer, D. A., Billard, J., ... CDMS Collaboration.
(2015).
First direct limits on lightly ionizing particles with electric charge less than e/6. Physical Review Letters.
114(11), 111302.
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Agnese, R., Anderson, A. J., Balakishiyeva, D., Thakur, R. B., Bauer, D. A., Billard, J., ... Zhang, J.
(2015).
Maximum likelihood analysis of low energy CDMS II germanium data. Physical Review D.
91(5), 052021.
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Jastram, A., Harris, H. R., Mahapatra, R., Phillips, J., Platt, M., Prasad, K., Sander, J., & Upadhyayula, S.
(2015).
Cryogenic Dark Matter Search detector fabrication process and recent improvements. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
772, 14-25.
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Agnese, R., Anderson, A. J., Asai, M., Balakishiyeva, D., Basu Thakur, R., Bauer, D. A., ... (SuperCDMS Collaboration).
(2014).
Search for low-mass weakly interacting massive particles with SuperCDMS. Physical Review Letters.
112(24), 241302.
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Agnese, R., Anderson, A. J., Asai, M., Balakishiyeva, D., Basu Thakur, R., Bauer, D. A., ... (SuperCDMS collaboration).
(2014).
Search for low-mass weakly interacting massive particles using voltage-assisted calorimetric ionization detection in the SuperCDMS experiment. Physical Review Letters.
112(4), 041302.
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Johnson, D. W., Ravikirthi, P., Suh, J. W., Lee, R., Hill, R., Wong, M. H., Piner, E. L., & Harris, H. R.
(2014).
Challenges of contact module integration for GaN-based devices in a Si-CMOS environment. Journal of Vacuum Science and Technology B.
32(3), 030606-030606.
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Karaoglan-Bebek, G., Woo, J. H., Nikishin, S., Harris, H. R., & Holtz, M.
(2014).
Optical studies of the effect of oxidation on GaN. Journal of Vacuum Science and Technology B.
32(1), 011213-011213.
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Johnson, D. W., Yum, J. H., Hudnall, T. W., Mushinski, R. M., Bielawski, C. W., Roberts, J. C., ... Harris, H. R.
(2014).
Characterization of ALD Beryllium Oxide as a Potential High-k Gate Dielectric for Low-Leakage AlGaN/GaN MOSHEMTs. Journal of Electronic Materials.
43(1), 151-154.
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Agnese, R., Ahmed, Z., Anderson, A. J., Arrenberg, S., Balakishiyeva, D., Basu Thakur, R., ... CDMS Collaboration.
(2013).
Silicon detector dark matter results from the final exposure of CDMS II. Physical Review Letters.
111(25), 251301.
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Johnson, D. W., Lee, R., Hill, R., Wong, M. H., Bersuker, G., Piner, E. L., Kirsch, P. D., & Harris, H. R.
(2013).
Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology. IEEE Transactions on Electron Devices.
60(10), 3197-3203.
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Yang, J., Savari, S. A., & Harris, H. R.
(2013).
Datapath system for multiple electron beam lithography systems using image compression. Journal of Micro/Nanolithography, MEMS, and MOEMS.
12(3), 033018-033018.
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Agnese, R., Ahmed, Z., Anderson, A. J., Arrenberg, S., Balakishiyeva, D., Thakur, R. B., ... Zhang, J.
(2013).
Silicon detector results from the first five-tower run of CDMS II. Physical Review D: Particles, Fields, Gravitation and Cosmology.
88(3), 031104.
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Gatabi, I. R., Johnson, D. W., Woo, J. H., Anderson, J. W., Coan, M. R., Piner, E. L., & Harris, H. R.
(2013).
PECVD Silicon Nitride Passivation of AlGaN/GaN Heterostructures. IEEE Transactions on Electron Devices.
60(3), 1082-1087.
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Agnese, R., Anderson, A. J., Balakishiyeva, D., Thakur, R. B., Bauer, D. A., Borgland, A., ... Zhang, J.
(2013).
Demonstration of surface electron rejection with interleaved germanium detectors for dark matter searches. Applied Physics Letters.
103(16), 164105-164105.
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Shin, H. S., Yum, J. H., Johnson, D. W., Harris, H. R., Hudnall, T. W., Oh, J., ... Lee, H. D.
(2013).
Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors. Applied Physics Letters.
103(22), 223504-223504.
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Liu, L., Kuryatkov, V. V., Nikishin, S. A., Harris, H. R., & Holtz, M.
(2013).
Wet etching silicon nanofins with (111)-oriented sidewalls. Journal of Vacuum Science and Technology B.
31(2), 021801-021801.
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Coan, M. R., Woo, J. H., Johnson, D., Gatabi, I. R., & Harris, H. R.
(2012).
Band offset measurements of the GaN/dielectric interfaces. Journal of Applied Physics.
112(2), 024508-024508.
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Coan, M., Johnson, D., Woo, J. H., Biswas, N., Misra, V., Majhi, P., & Harris, H. R.
(2012).
Work function extraction of metal gates with alternate channel materials. Journal of Vacuum Science and Technology B.
30(2), 022202-022202.
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Hussain, M. M., Smith, C. E., Harris, H. R., Young, C. D., Tseng, H., & Jammy, R.
(2010).
Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-k/Metal Gates CMOS FinFETs for Multi-V-Th Engineering. IEEE Transactions on Electron Devices.
57(3), 626-631.
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Kuryatkov, V. V., Feng, W., Pandikunta, M., Woo, J. H., Garcia, D., Harris, H. R., Nikishin, S. A., & Holtz, M.
(2010).
GaN stripes on vertical {111} fin facets of (110)-oriented Si substrates. Applied Physics Letters.
96(7), 073107-073107.
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Lu, Z., Fossum, J. G., Yang, J., Harris, H. R., Trivedi, V. R., Chu, M., & Thompson, S. E.
(2009).
A Simplified Superior Floating-Body/Gate DRAM Cell. IEEE Electron Device Letters.
30(3), 282-284.
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Huang, J., Kirsch, P. D., Oh, J., Lee, S. H., Majhi, P., Harris, H. R., ... Jammy, R.
(2009).
Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- $k$/Metal Gate Stacks Directly on SiGe. IEEE Electron Device Letters.
30(3), 285-287.
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Nikishin, S., Borisov, B., Pandikunta, M., Dahal, R., Lin, J. Y., Jiang, H. X., Harris, H., & Holtz, M.
(2009).
High quality AlN for deep UV photodetectors. Applied Physics Letters.
95(5), 054101-054101.
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Yang, J., Harris, H. R., Bersuker, G., Kang, C. Y., Oh, J., Lee, B. H., Tseng, H., & Jammy, R.
(2009).
New Hot-Carrier Injection Mechanism at Source Side in Nanoscale Floating-Body MOSFETs. IEEE Electron Device Letters.
30(1), 54-56.
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Suthram, S., Hussain, M. M., Harris, H. R., Smith, C., Tseng, H., Jammy, R., & Thompson, S. E.
(2008).
Comparison of Uniaxial Wafer Bending and Contact-Etch-Stop-Liner Stress Induced Performance Enhancement on Double-Gate FinFETs. IEEE Electron Device Letters.
29(5), 480-482.
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Kirsch, P. D., Sivasubramani, P., Huang, J., Young, C. D., Quevedo-Lopez, M. A., Wen, H. C., ... Kingon, A. I.
(2008).
Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning. Applied Physics Letters.
92(9), 092901-092901.
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Joshi, S., Krug, C., Heh, D., Na, H. J., Harris, H. R., Oh, J. W., ... Banerjee, S. K.
(2007).
Improved Ge Surface Passivation with Ultrathin $ hbox{SiO}_{X}$ Enabling High-Mobility Surface Channel pMOSFETs Featuring a HfSiO/WN Gate Stack. IEEE Electron Device Letters.
28(4), 308-311.
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Majhi, P., Wen, H. C., Alshareef, H., Harris, H. R., Luan, H., Choi, K., ... Jammy, R.
(2006).
Developing a systematic approach to metal gates and high-k dielectrics in future-generation CMOS. Micro -Santa Monica-.
24(4), 25-31.
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Choi, K., Alshareef, H. N., Wen, H. C., Harris, H., Luan, H., Senzaki, Y., ... Lee, B. H.
(2006).
Effective work function modification of atomic-layer-deposited-TaN film by capping layer. Applied Physics Letters.
89(3), 032113-032113.
-
Luan, H., Alshareef, H. N., Harris, H. R., Wen, H. C., Choi, K., Senzaki, Y., Majhi, P., & Lee, B.
(2006).
Evaluation of titanium silicon nitride as gate electrodes for complementary metal-oxide semiconductor. Applied Physics Letters.
88(14), 142113-142113.
-
Alshareef, H. N., Luan, H. F., Choi, K., Harris, H. R., Wen, H. C., Quevedo-Lopez, M. A., Majhi, P., & Lee, B. H.
(2006).
Metal gate work function engineering using AlNx interfacial layers. Applied Physics Letters.
88(11), 112114-112114.
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Alshareef, H. N., Choi, K., Wen, H. C., Luan, H., Harris, H., Senzaki, Y., ... Wallace, R. M.
(2006).
Composition dependence of the work function of Ta1xAlxNy metal gates. Applied Physics Letters.
88(7), 072108-072108.
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Wen, H., Choi, R., Brown, G. A., BsckeBoscke, T., Matthews, K., Harris, H. R., ... Lee, B. H.
(2006).
Comparison of Effective Work Function Extraction Methods Using Capacitance and Current Measurement Techniques. IEEE Electron Device Letters.
27(7), 598-601.
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Wen, H., Harris, H. R., Young, C. D., Luan, H., Alshareef, H. N., Choi, K., ... Lee, B. H.
(2006).
On Oxygen Deficiency and Fast Transient Charge-Trapping Effects in High-$k$ Dielectrics. IEEE Electron Device Letters.
27(12), 984-987.
-
Alshareef, H. N., Wen, H. C., Luan, H. F., Choi, K., Harris, H. R., Senzaki, Y., ... Lian, G.
(2006).
Temperature dependence of the work function of ruthenium-based gate electrodes. THIN SOLID FILMS.
515(4), 1294-1298.
-
Luan, H., Alshareef, H. N., Lysaght, P. S., Harris, H. R., Wen, H. C., Choi, K., ... Lee, B.
(2005).
Evaluation of tantalum silicon alloy systems as gate electrodes. Applied Physics Letters.
87(21), 212110-212110.
-
Alshareef, H. N., Wen, H. C., Harris, H. R., Choi, K., Luan, H. F., Lysaght, P., ... Ukride, V.
(2005).
Modulation of the work function of silicon gate electrode using thin TaN interlayers. Applied Physics Letters.
87(5), 052109-052109.
-
Wen, H., Lysaght, P., Alshareef, H. N., Huffman, C., Harris, H. R., Choi, K., ... Kwong, D.
(2005).
Thermal response of Ru electrodes in contact with SiO2 and Hf-based high-k gate dielectrics. Journal of Applied Physics.
98(4), 043520-043520.
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Harris, H. R., Choi, R., Sim, J. H., Young, C. D., Majhi, P., Lee, B. H., & Bersuker, G.
(2005).
Electrical Observation of Deep Traps in High-$Kappa$/Metal Gate Stack Transistors. IEEE Electron Device Letters.
26(11), 839-841.
-
Choi, K., Temkin, H., Harris, H., Gangopadhyay, S., Xie, L., & White, M.
(2004).
Initial growth of interfacial oxide during deposition of HfO2 on silicon. Applied Physics Letters.
85(2), 215-217.
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Choi, K., Harris, H., Gangopadhyay, S., & Temkin, H.
(2003).
Cleaning of Si and properties of the HfO2Si interface. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films.
21(3), 718-722.
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Harris, H., Choi, K., Mehta, N., Chandolu, A., Biswas, N., Kipshidze, G., ... Temkin, H.
(2002).
HfO2 gate dielectric with 0.5 nm equivalent oxide thickness. Applied Physics Letters.
81(6), 1065-1067.
-
Harris, H., Biswas, N., Temkin, H., Gangopadhyay, S., & Strathman, M.
(2001).
Plasma enhanced metalorganic chemical vapor deposition of amorphous aluminum nitride. Journal of Applied Physics.
90(11), 5825-5831.
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Wang, X., Harris, H., Temkin, H., Gangopadhyay, S., Strathman, M. D., & West, M.
(2001).
Determination of oscillator strength of CF vibrations in fluorinated amorphous-carbon films by infrared spectroscopy. Applied Physics Letters.
78(20), 3079-3081.
-
Biswas, N., Harris, H. R., Wang, X., Celebi, G., Temkin, H., & Gangopadhyay, S.
(2001).
Electrical properties of fluorinated amorphous carbon films. Journal of Applied Physics.
89(8), 4417-4421.
-
Wang, X., Harris, H. R., Bouldin, K., Temkin, H., Gangopadhyay, S., Strathman, M. D., & West, M.
(2000).
Structural properties of fluorinated amorphous carbon films. Journal of Applied Physics.
87(1), 621-623.
-
Alkhatib, I., Amaral, D., Aralis, T., Aramaki, T., Arnquist, I. J., Ataee Langroudy, I., ... SuperCDMS Collaboration.
(2021).
Constraints on Lightly Ionizing Particles from CDMSlite. Physical Review Letters.
127(8), 081802.
-
conference paper
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Johnson, D., Babb, M., Ravikirthi, P., Suh, J. W., & Harris, H. R.
(2017).
Self-Aligned Contact Metallization to AlGaN/GaN Heterostructures. Device Research Conference - Conference Digest, DRC.
1-2.
-
Liu, L., Myasishchev, D., Kuryatkov, V. V., Nikishin, S. A., Harris, H. R., & Holtz, M.
(2013).
TMAH wet etching of silicon micro- and nano-fins for selective sidewall epitaxy of III-Nitride semiconductors. 185-192.
-
Gatabi, I. R., Johnson, D. W., Woo, J. H., Babb, M. E., & Harris, H. R.
(2013).
Design Considerations to Enhance the Modulation Efficiency and Cutoff Frequency of AlGaN/InGaN/GaN HEMTs. 62-67.
-
Adhikari, H., Harris, H. R., Smith, C. E., Yang, J., Coss, B., Parthasarathy, S., ... Jammy, R.
(2009).
HIGH MOBILITY SIGE SHELL-SI CORE OMEGA GATE PFETS. 136-+.
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Kirsch, P. D., Sivasubramani, P., Huang, J., Young, C. D., Park, C. S., Freeman, K., ... Jammy, R.
(2009).
Dipole Model Explaining High-k/Metal Gate Threshold Voltage Tuning. ECS Transactions.
269-+.
-
Harris, H. R., Majhi, P., Kirsch, P., Sivasubramani, P., Oh, J. W., & Song, S. C.
(2009).
The Challenges in Introducing PMOS Dual Channel in CMOS Processing. ECS Transactions.
223-+.
-
Harris, H. R., Adhikari, H., Smith, C. E., Smith, G., Yang, J., Majhi, P., & Jammy, R.
(2008).
Adjusting to 3D Devices in a 2D Device World. IEEE International SOI Conference.
115-+.
-
Huang, J., Kirsch, P. D., Heh, D., Kang, C. Y., Bersuker, G., Hussain, M., ... Jammy, R.
(2008).
Device and Reliability Improvement of HfSiON+LaOx/Metal Gate Stacks for 22nm Node Application. International Electron Devices Meeting.
1-4.
-
Yang, J., Harris, H. R., Hussain, M. M., Sassman, B., Tseng, H., & Jammy, R.
(2008).
Enhanced Performance and SRAM Stability in FinFET with Reduced Process Steps for Source/Drain Doping. 2010 IEEE International Power Modulator and High Voltage Conference.
20-21.
-
Huang, J., Kirsch, P. D., Hussain, M., Heh, D., Sivasubramani, P., Young, C., ... Jammy, R.
(2008).
Gate First Band Edge High-k/Metal Stacks with EOT=0.74nm for 22nm Node nFETs. International Symposium on Vlsi Technology Systems and Applications.
152-153.
-
Huang, J., Kirsch, P. D., Oh, J., Lee, S. H., Price, J., Majhi, P., ... Jammy, R.
(2008).
Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High-k/Metal Gate Stacks Directly on SiGe and a Method to Enable sub-1nm EOT. Symposium on Vlsi Technology.
82-83.
-
Yang, J., Harris, H. R., Kang, C. Y., Young, C. D., Lee, K. T., Lee, H. D., ... Jammy, R.
(2008).
New Hot-Carrier Degradation Phenomenon in Nano-Scale Floating Body MOSFETs. IEEE International Reliability Physics Symposium Proceedings.
739-740.
-
Suthram, S., Sur, Y., Majhi, P., Ok, I., Kim, H., Harris, H. R., ... Thompson, S. E.
(2008).
Strain Additivity in III-V Channels for CMOSFETs beyond 22nm Technology Node. Symposium on Vlsi Technology.
182-183.
-
Loh, W., Majhi, P., Lee, S., Oh, J., Sassman, B., Young, C., ... Jammy, R.
(2008).
The effects of Ge composition and Si cap thickness on hot carrier reliability of Si/Si1-xGex/Si p-MOSFETs with high-$K$/metal gate. Symposium on Vlsi Technology.
56-57.
-
Suthram, S., Harris, H. R., Hussain, M. M., Smith, C., Young, C. D., Yang, J., ... Thompson, S. E.
(2008).
Understanding Strain Effects on Double-Gate FinFET Drive-Current Enhancement, Hot-Carrier Reliability and Ring-Oscillator Delay Performance via Uniaxial Wafer Bending Experiments. 2010 IEEE International Power Modulator and High Voltage Conference.
163-164.
-
Harris, R., Hussain, M., Smith, C., Yang, J., Barnett, J., Sassman, B., ... Jammy, R.
(2007).
Critical Components of FinFet Integration: Examining the Density Trade-off and Process Integration for FinFET Implementation. ECS Transactions.
331-338.
-
Harris, H. R., Kalra, P., Majhi, P., Hussain, M., Kelly, D., Oh, J., ... Jammy, R.
(2007).
Band-Engineered Low PMOS VT with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme. Symposium on Vlsi Technology.
154-155.
-
Sivasubramani, P., Bscke, T. S., Huang, J., Young, C. D., Kirsch, P. D., Krishnan, S. A., ... Jammy, R.
(2007).
Dipole Moment Model Explaining nFET Vt Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics. Symposium on Vlsi Technology.
68-69.
-
Harris, H. R., Thompson, S. E., Krishnan, S., Kirsch, P., Majhi, P., Smith, C. E., ... Jammy, R.
(2007).
Flexible, Simplified CMOS on Si(110) with Metal Gate / High for HP and LSTP. International Electron Devices Meeting.
57-60.
-
Suthram, S., Majhi, P., Sun, G., Kalra, P., Harris, H. R., Choi, K. J., ... Jammy, R.
(2007).
High Performance pMOSFETs using Si/Si1-xGex/Si Quantum Wells with High-k/Metal Gate Stacks and Additive Uniaxial Strain for 22 nm Technology Node. International Electron Devices Meeting.
727-730.
-
Choi, K., Lee, T., Barnett, J., Harris, H. R., Kweon, S., Young, C., ... Jammy, R.
(2007).
Impact of Bottom Interfacial Layer on the Threshold Voltage and Device Reliability of Fluorine Incorporated PMOSFETs with High-K/Metal Gate. Annual Proceedings - Reliability Physics (Symposium).
374-377.
-
Alshareef, H. N., Harris, H. R., Wen, H. C., Park, C. S., Huffman, C., Choi, K., ... Kingon, A. I.
(2006).
Thermally stable N-metal gate MOSFETs using La-incorporated HfSiO dielectric. Symposium on Vlsi Technology.
7-8.
-
Young, C. D., Nadkarni, S., Heh, D., Harris, H. R., Choi, R., Peterson, J. J., ... Bersuker, G.
(2006).
Detection of Electron Trap Generation due to Constant Voltage Stress on High- Gate Stacks. IEEE International Reliability Physics Symposium Proceedings.
169-173.
-
Krishnan, S. A., Harris, H. R., Kirsch, P. D., Krug, C., Quevedo-Lopez, M., Youn, C., ... Jammy, R.
(2006).
High Performing pMOSFETs on Si(110) for Application to Hybrid Orientation Technologies - Comparison of Hf02 and HfSiON. International Electron Devices Meeting.
1-4.
-
Harris, H. R., Alshareef, H., Wen, H. C., Krishnan, S., Choi, K., Luan, H., ... Jammy, R.
(2006).
Simplified manufacturable band edge metal gate solution for NMOS without a capping layer. International Electron Devices Meeting.
1-4.
-
Quevedo-Lopez, M. A., Kirsch, P. D., Krishnan, S., Alshareef, H. N., Barnett, J., Harris, H. R., ... Lee, B. H.
(2006).
Systematic gate stack optimization to maximize mobility with HfSiON EOT scaling. 113-116.
-
Harris, H. R., Choi, R., Lee, B. H., Young, C. D., Sim, J. H., Mathews, K., ... Bersuker, G.
(2005).
Comparison of NMOS and PMOS stress for determining the source of NBTI in TiN/HfSiON devices. IEEE International Reliability Physics Symposium Proceedings.
80-83.
-
Harris, H. R., Wen, H. C., Choi, K., Alshareef, H., Luan, H., Senzaki, Y., ... Lee, B. H.
(2005).
Demonstration of High Performance Transistors with PVD Metal Gate. 431-434.
-
Young, C. D., Heha, D., Nadkami, S., Choi, R., Peterson, J. J., Harris, H. R., ... Bersuker, G.
(2005).
Detection of Trap Generation in High- GateStacks. 79-83.
-
Wen, H. C., Alshareef, H. N., Luan, H., Choi, K., Lysaght, P., Harris, H. R., ... Lee, B. H.
(2005).
Systematic Investigation of Amorphous Transition-Metal-Silicon-Nitride Electrodes for Metal Gate CMOS Applications. Symposium on Vlsi Technology.
46-47.
-
Harris, H. R., Choi, R., Lee, B. H., Young, C. D., Sim, J. H., Mathews, K., ... Bersuker, G.
(2004).
Recovery of NBTI degradation in HfSiON/metal gate transistors. 132-135.
-
Harris, H., Choi, K., Biswas, N., Chary, I., Xie, L., Mehta, N., ... Gangopadhyay, S.
(2003).
Reducing the interfacial formation of SiOx in HFO
2 MOS structures: A study in pre-deposition cleaning, surface oxidation and post-deposition annealing. 9-23.
-
Choi, K., Harris, H., Gangopadhyay, S., & Temkin, H.
(2003).
Limiting native oxide regrowth for high-k gate dielectrics. MRS Online Proceedings Library.
85-90.
-
Johnson, D., Babb, M., Ravikirthi, P., Suh, J. W., & Harris, H. R.
(2017).
Self-Aligned Contact Metallization to AlGaN/GaN Heterostructures. Device Research Conference - Conference Digest, DRC.
1-2.
Research
principal investigator on
co-principal investigator on
- The SuperCDMS Program at Texas A&M University- awarded by United States Department of Energy - (Washington D.C., District of Columbia, United States) 2015 - 2018
- CDMS Crystal Polishing at Texas A&M University awarded by SLAC National Accelerator Laboratory - (Menlo Park, California, United States) 2013 - 2015
investigator on
Teaching
teaching activities
- ECEN215 Prin Of Electrical Engr Instructor
- ECEN314 Signals And Systems Instructor
- ECEN325 Electronics Instructor
- ECEN370 Elec Props Of Matls Instructor
- ECEN472 Microelect Circuit Fab Instructor
- ECEN473 Microelec Device Desgn Instructor
- ECEN491 Research Instructor
- ECEN671 Solid State Devices Instructor
- ECEN684 Professional Internship Instructor
- ECEN685 Directed Studies Instructor
- ECEN688 Ic Mems And Sensor Fab Instructor
- ECEN691 Research Instructor
- MSEN685 Directed Studies Instructor
- MSEN691 Research Instructor
- PHYS485 Directed Studies Instructor
- PHYS491 Hnr-research Instructor
- PHYS685 Directed Studies Instructor
- PHYS691 Research Instructor
Works By Students
chaired theses and dissertations
-
Berber, Feyza (2017-05). Microwave Characterization of GaN-on-Si Heterostructure Loss and 2DEG as a Conductor.
-
Coan, Mary (2012-10). Impact of Chemical States on the Effective Work Function of Metal Gate and High-kappa Dielectric Materials on Novel Heterostructures.
-
Johnson, Derek Wade (2014-07). Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors.
-
Prasad, Kunj Bihari (2013-12). Search for Lightly Ionizing Particles Using CDMS-II Data and Fabrication of CDMS Detectors with Improved Homogeneity in Properties.
-
Ravikirthi, Pradhyumna (2014-08). Au-free Ohmic Contacts to Gallium Nitride and Graphene.
-
Rezanezhad Gatabi, Iman (2013-06). Tunnel MOS Heterostructure Field Effect Transistor for RF Switching Applications.
-
Sharma, Pranav (2015-11). Fabrication and Characterization of Al / AlOx / Al Josephson Junctions.
-
Suh, Jae Woo (2016-12). Device Design Parameterization of III-V Multi-Gate FETs.
Background
education and training
- Ph.D. in Electrical and Computer Engineering, Texas Tech University - (Amarillo, Texas, United States) 2003
- M.S. in Electrical Engineering, Texas Tech University - (Amarillo, Texas, United States) 1999
- B.S. in Engineering Physics, Texas Tech University - (Amarillo, Texas, United States) 1997
Contact
first name
- Rusty
has last name
- Harris
mailing address
-
Texas A&M University
Electrical Engineering
3128 TAMU
College Station, TX 77843-3128
USA
Other
- rusty.harris@tamu.edu