Gate First Band Edge High-k/Metal Stacks with EOT=0.74nm for 22nm Node nFETs
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We demonstrate for the first time a gate first high-k/metal gate (MG) nFET with EOT=0.74nm (Tinv=1.15nm), low V, =0.30V, high performance [Ion/Ioff=μA/um) at 100(nA/urn)], low leakage (>200x reduction vs. SiO2/PolySi) and good PBTI. Low-k interface layer scaling and high-k La-doping enable this desirable EOT and Vt. SiON/HfLaSiON can give similar interface quality as SiO2/HfSiON. Device performance was further improved 5% by strain engineering. © 2008 IEEE.
author list (cited authors)
Huang, J., Kirsch, P. D., Hussain, M., Heh, D., Sivasubramani, P., Young, C., ... Jammy, R.