GaN stripes on vertical {111} fin facets of (110)-oriented Si substrates Academic Article

abstract

• Selective sidewall epitaxy of AlN/GaN is reported on vertical fins of silicon using metallorganic vapor phase epitaxy. Silicon (110) wafers are structured to form fins with {111} sidewall facets. AlN buffer layers are grown with uniform thickness on vertical {111} surfaces, followed by GaN which grows selectively on the AlN to form the sidewall fin structures. Raman measurements of the GaN show very narrow line widths, consistent with excellent material quality. Spatial dependence from microcathodoluminescence mapping of the GaN band gap emission shows compressive strain in the GaN relaxes closer to the fin corners. 2010 American Institute of Physics.

authors

• Harris, Rusty

published proceedings

• APPLIED PHYSICS LETTERS

altmetric score

• 6

author list (cited authors)

• Kuryatkov, V. V., Feng, W., Pandikunta, M., Woo, J. H., Garcia, D., Harris, H. R., Nikishin, S. A., & Holtz, M.

citation count

• 7

complete list of authors

• Kuryatkov, VV||Feng, W||Pandikunta, M||Woo, JH||Garcia, D||Harris, HR||Nikishin, SA||Holtz, M

publication date

• January 2010

publisher

• AIP Publishing  Publisher

published in

• Applied Physics Letters  Journal

keywords

• Aluminium Compounds
• Buffer Layers
• Cathodoluminescence
• Gallium Compounds
• Iii-v Semiconductors
• Internal Stresses
• Mocvd
• Raman Spectra
• Semiconductor Epitaxial Layers
• Semiconductor Growth
• Vapour Phase Epitaxial Growth
• Wide Band Gap Semiconductors

Digital Object Identifier (DOI)

• 10.1063/1.3310279

start page

• 073107

end page

• 073107

volume

• 96

issue

• 7

URL

• http://dx.doi.org/10.1063/1.3310279