Systematic gate stack optimization to maximize mobility with HfSiON EOT scaling Conference Paper uri icon

abstract

  • ©2006 IEEE. A systematic study to optimize gate stack constituents (interface, high- κ, metal gate) to maximize carrier mobility with aggressively scaled equivalent oxide thickness (EOT) is presented. We identify ultra-thin thermal oxide, atomic layer deposited HfSiON and optimized plasma nitridation performed in sequence as the optimized run path for sub-nm EOT scaling with high carrier mobility. A metal gate deposition process that minimizes the incorporation of impurities in HfSiON is also vital to maintaining good mobility at low EOTs.

author list (cited authors)

  • Quevedo-Lopez, M. A., Kirsch, P. D., Krishnan, S., Alshareef, H. N., Barnett, J., Harris, H. R., ... Lee, B. H.

publication date

  • January 2006