Systematic gate stack optimization to maximize mobility with HfSiON EOT scaling Conference Paper uri icon

abstract

  • 2006 IEEE. A systematic study to optimize gate stack constituents (interface, high- , metal gate) to maximize carrier mobility with aggressively scaled equivalent oxide thickness (EOT) is presented. We identify ultra-thin thermal oxide, atomic layer deposited HfSiON and optimized plasma nitridation performed in sequence as the optimized run path for sub-nm EOT scaling with high carrier mobility. A metal gate deposition process that minimizes the incorporation of impurities in HfSiON is also vital to maintaining good mobility at low EOTs.

published proceedings

  • ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

author list (cited authors)

  • Quevedo-Lopez, M. A., Kirsch, P. D., Krishnan, S., Alshareef, H. N., Barnett, J., Harris, H. R., ... Lee, B. H.

complete list of authors

  • Quevedo-Lopez, MA||Kirsch, PD||Krishnan, S||Alshareef, HN||Barnett, J||Harris, HR||Neugroschel, A||Aguirre-Tostado, FS||Gnade, BE||Kim, MJ||Wallace, RM||Lee, BH

publication date

  • January 2006