New Hot-Carrier Degradation Phenomenon in Nano-Scale Floating Body MOSFETs Conference Paper

abstract

• New hot-carrier degradation phenomenon that depends on gate bias in nano-scale floating body MOSFETs is identified using 2-D device simulation and hot-carrier injection measurements. In the case of sufficiently high gate voltage, the potential of the floating body is elevated due to the ohmic voltage drop at the source extension resulting in impact ionization at the source as well as drain junctions. Hot carrier stress with accelerated gate voltage may lead to an incorrect estimation of lifetime in nano-scale floating body MOSFETs. 2008 IEEE.

name of conference

• 2008 IEEE International Reliability Physics Symposium

authors

• Harris, Rusty

published proceedings

• 2008 IEEE International Reliability Physics Symposium

author list (cited authors)

• Yang, J., Harris, H. R., Kang, C. Y., Young, C. D., Lee, K. T., Lee, H. D., ... Jammy, R.

citation count

• 2

complete list of authors

• Yang, J-W||Harris, HR||Kang, CY||Young, CD||Lee, KT||Lee, HD||Bersuker, G||Lee, BH||Tseng, H-H||Jammy, R

publication date

• January 2008

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE International Reliability Physics Symposium Proceedings  Journal

Digital Object Identifier (DOI)

• 10.1109/relphy.2008.4559015

International Standard Book Number (ISBN) 13

• 9781424420506

start page

• 739

end page

• 740

URL

• http://dx.doi.org/10.1109/relphy.2008.4559015