Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors

In this paper, we discuss atomic configuration of atomic layer deposition (ALD) beryllium oxide (BeO) using the quantum chemistry to understand the theoretical origin. BeO has shorter bond length, higher reaction enthalpy, and larger bandgap energy compared with those of ALD aluminum oxide. It is shown that the excellent material properties of ALD BeO can reduce interface defect density due to the self-cleaning reaction and this contributes to the improvement of device performance of InGaAs MOSFETs. The low interface defect density and low leakage current of InGaAs MOSFET were demonstrated using X-ray photoelectron spectroscopy and the corresponding electrical results. 2013 AIP Publishing LLC.

Shin, H. S., Yum, J. H., Johnson, D. W., Harris, H. R., Hudnall, T. W., Oh, J., ... Lee, H. D.

Shin, HS||Yum, JH||Johnson, DW||Harris, HR||Hudnall, Todd W||Oh, J||Kirsch, P||Wang, W-E||Bielawski, CW||Banerjee, SK||Lee, JC||Lee, HD

Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors Academic Article