Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-k/Metal Gates CMOS FinFETs for Multi-V-Th Engineering
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abstract
Gate-first integration of tunable work function metal gates of different thicknesses (320 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering 40 mV/V), nearly symmetric VTh, low T inv( 1.4 nm), and high Ion(780Am) for N/PMOS without any intentional strain enhancement. 2006 IEEE.