Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-k/Metal Gates CMOS FinFETs for Multi-V-Th Engineering Academic Article uri icon

abstract

  • Gate-first integration of tunable work function metal gates of different thicknesses (320 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering 40 mV/V), nearly symmetric VTh, low T inv( 1.4 nm), and high Ion(780Am) for N/PMOS without any intentional strain enhancement. 2006 IEEE.

published proceedings

  • IEEE TRANSACTIONS ON ELECTRON DEVICES

altmetric score

  • 10

author list (cited authors)

  • Hussain, M. M., Smith, C. E., Harris, H. R., Young, C. D., Tseng, H., & Jammy, R.

citation count

  • 25

complete list of authors

  • Hussain, Muhammad Mustafa||Smith, Casey E||Harris, H Rusty||Young, Chadwin D||Tseng, Hsing-Huang||Jammy, Rajarao

publication date

  • March 2010