Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses into High-$k$/Metal Gates CMOS FinFETs for Multi- $V_{
m Th}$ Engineering Academic Article uri icon

abstract

  • Gate-first integration of tunable work function metal gates of different thicknesses (320 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ∼ 40 mV/V), nearly symmetric VTh, low T inv(∼ 1.4 nm), and high Ion(∼780μAμm) for N/PMOS without any intentional strain enhancement. © 2006 IEEE.

altmetric score

  • 10

author list (cited authors)

  • Hussain, M. M., Smith, C. E., Harris, H. R., Young, C. D., Tseng, H., & Jammy, R.

citation count

  • 22

publication date

  • February 2010