Understanding Strain Effects on Double-Gate FinFET Drive-Current Enhancement, Hot-Carrier Reliability and Ring-Oscillator Delay Performance via Uniaxial Wafer Bending Experiments
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Strain induced drive current enhancement on Double-Gate (DG) FinFETs from Contact Etch Stop Liners (CESLs) is modeled by performing wafer bending experiments. Longitudinal piezoresistance co-efficients for DG - FinFETs are extracted and shown to be different from the bulk Si values. This understanding is further used to gain insight into strain effects on FinFET Ring-Oscillator (RO) delay performance. FinFET hot-carrier degradation is observed to be enhanced for both tension and compression, and is explained to be due to increased irapactionization from strain induced bandgap narrowing at the drain-body junction. © 2008 IEEE.
author list (cited authors)
Suthram, S., Harris, H. R., Hussain, M. M., Smith, C., Young, C. D., Yang, J., ... Thompson, S. E.