Thermally stable N-metal gate MOSFETs using La-incorporated HfSiO dielectric Conference Paper uri icon

abstract

  • We report a thermally stable N-metal process in which surface passivation of HfSiO dielectric using thin layers of La2O3, deposited by either MBE or PVD, significantly shifts the metal gate effective work function toward the Si conduction band edge. Well-behaved transistors with Lg down to 70 nm have been fabricated with threshold voltage of 0.25V, mobility up to 92% of the universal SiO2 mobility, and T inv∼1.6nm. © 2006 IEEE.

author list (cited authors)

  • Alshareef, H. N., Harris, H. R., Wen, H. C., Park, C. S., Huffman, C., Choi, K., ... Kingon, A. I.

publication date

  • December 2006