High Performing pMOSFETs on Si(110) for Application to Hybrid Orientation Technologies -- Comparison of HfO2 and HfSiON Conference Paper uri icon

abstract

  • A comprehensive study implementing a high-k/metal gate stack on Si(110) substrates has been performed, including a comparison of HfO2 and HfSiON, and compatibility with strain engineering. We demonstrate p-channel MOSFETs (pFETs) with optimized Atomic Layer Deposited (ALD) HfO2 on Si(100) substrates with a 3.3 high field hole mobility (h) enhancement vs. a Si(100) substrate. On-state drain current (Ion) obtained for the HfO2/Si(110) is -831 A/um at 100 nA/m offstate drain current (Ioff). This is among the best performing pFETs ever reported. We also report, for the first time, a difference in performance between HfO2 and HfSiON on Si(110). HfO2 exhibits better hole mobility and overall performance than HfSiON on Si(110). Low temperature hole mobility measurements suggest that HfO2 has reduced coulomb and surface roughness scattering vs. HfSiON.

name of conference

  • 2006 International Electron Devices Meeting

published proceedings

  • 2006 International Electron Devices Meeting

author list (cited authors)

  • Krishnan, S. A., Harris, H. R., Kirsch, P. D., Krug, C., Quevedo-Lopez, M., Young, C., ... Jammy, R.

citation count

  • 4

complete list of authors

  • Krishnan, Siddarth A||Harris, H Rusty||Kirsch, Paul D||Krug, Cristiano||Quevedo-Lopez, Manuel||Young, Chadwin||Lee, Byoung Hun||Choi, Rino||Chowdhury, Naser||Suthram, Sagar||Thompson, Scott||Bersuker, Gennadi||Jammy, Rajarao

publication date

  • December 2006

publisher