Electrical properties of fluorinated amorphous carbon films
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We have studied the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage characteristics of fluorinated amorphous carbon (a-C:Fcursive chi) films using metal/a-C:Fcursive chi/Si and metal/a-C:Fcursive chi/metal structures, respectively. Samples annealed in a vacuum were also studied. The C-V curves of the as-deposited sample are stretched about the voltage axis. Interface state density of 4.1 × 1011 cm-2eV-1 at the midgap was calculated. Annealing the sample deposited on Si in a vacuum caused more frequency dispersion in the C-V and G-V curves, probably due to the diffusion of carbon into silicon. The bulk density of states for samples deposited on metal, measured by space-charge-limited current technique, decreased from 4 × 1018 eV-1 cm-3 for the as-deposited sample, to 7 × 1017eV-1 cm-3 for the annealed sample. © 2001 American Institute of Physics.
author list (cited authors)
Biswas, N., Harris, H. R., Wang, X., Celebi, G., Temkin, H., & Gangopadhyay, S.