Electrical properties of fluorinated amorphous carbon films Academic Article

abstract

• We have studied the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage characteristics of fluorinated amorphous carbon (a-C:Fcursive chi) films using metal/a-C:Fcursive chi/Si and metal/a-C:Fcursive chi/metal structures, respectively. Samples annealed in a vacuum were also studied. The C-V curves of the as-deposited sample are stretched about the voltage axis. Interface state density of 4.1 1011 cm-2eV-1 at the midgap was calculated. Annealing the sample deposited on Si in a vacuum caused more frequency dispersion in the C-V and G-V curves, probably due to the diffusion of carbon into silicon. The bulk density of states for samples deposited on metal, measured by space-charge-limited current technique, decreased from 4 1018 eV-1 cm-3 for the as-deposited sample, to 7 1017eV-1 cm-3 for the annealed sample. 2001 American Institute of Physics.

authors

• Harris, Rusty

published proceedings

• Journal of Applied Physics

author list (cited authors)

• Biswas, N., Harris, H. R., Wang, X., Celebi, G., Temkin, H., & Gangopadhyay, S.

citation count

• 23

complete list of authors

• Biswas, N||Harris, HR||Wang, X||Celebi, G||Temkin, H||Gangopadhyay, S

publication date

• April 2001

publisher

• AIP Publishing  Publisher

published in

• Journal of Applied Physics  Journal

Digital Object Identifier (DOI)

• 10.1063/1.1353804

start page

• 4417

end page

• 4421

volume

• 89

issue

• 8

URL

• http://dx.doi.org/10.1063/1.1353804