Systematic Investigation of Amorphous Transition-Metal-Silicon-Nitride Electrodes for Metal Gate CMOS Applications Conference Paper

abstract

• Select amorphous metals (transition-metal-silicon-nitride: TaSiN, MoSiN, HfSiN, TiSiN), were systematically evaluated for their electrical (effective work function) and physical (XRD, HRTEM, HAADF-STEM, EELS) properties. Effective work function values spanning 4.16 to 4.8 eV were observed for these materials after a 1000C anneal and on both SiO2 and Hf based high-k dielectrics, making them attractive candidates for future generation CMOS metal gates.

name of conference

• Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005.

authors

• Harris, Rusty

published proceedings

• Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005.

author list (cited authors)

• Wen, H. C., Alshareef, H. N., Luan, H., Choi, K., Lysaght, P., Harris, H. R., ... Lee, B. H.

citation count

• 12

complete list of authors

• Wen, HC||Alshareef, HN||Luan, H||Choi, K||Lysaght, P||Harris, HR||Huffman, C||Brown, GA||Bersuker, G||Zeitzoff, P||Huff, H||Majhi, P||Lee, BH

publication date

• January 2005

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• Symposium on Vlsi Technology  Journal

Digital Object Identifier (DOI)

• 10.1109/.2005.1469206

start page

• 46

end page

• 47

volume

• 2005

URL

• http://dx.doi.org/10.1109/.2005.1469206