Systematic Investigation of Amorphous Transition-Metal-Silicon-Nitride Electrodes for Metal Gate CMOS Applications Conference Paper uri icon

abstract

  • Select amorphous metals (transition-metal-silicon-nitride: TaSiN, MoSiN, HfSiN, TiSiN), were systematically evaluated for their electrical (effective work function) and physical (XRD, HRTEM, HAADF-STEM, EELS) properties. Effective work function values spanning 4.16 to 4.8 eV were observed for these materials after a 1000°C anneal and on both SiO2 and Hf based high-k dielectrics, making them attractive candidates for future generation CMOS metal gates.

author list (cited authors)

  • Wen, H. C., Alshareef, H. N., Luan, H., Choi, K., Lysaght, P., Harris, H. R., ... Lee, B. H.

citation count

  • 11

publication date

  • January 2005

publisher