Detection of Electron Trap Generation due to Constant Voltage Stress on High- Gate Stacks Conference Paper uri icon

abstract

  • Positive constant voltage stress combined with charge pumping (CP) measurements was applied to study trap generation phenomena in SiO 2/HfO2/TiN stacks. Using the analysis for frequency-dependent CP data developed to address depth profiling of the electron traps, we have determined that the voltage stress-induced generation of the defects contributing to threshold voltage instability in high- gate stacks occurs primarily within the interfacial SiO2 layer (IL) on the as-grown "precursor" defects most likely caused by the overlaying HfO2 layer. These results point to the IL as a major focus for reliability improvement of high- stacks. 2006 IEEE.

name of conference

  • 2006 IEEE International Reliability Physics Symposium Proceedings

published proceedings

  • 2014 IEEE International Reliability Physics Symposium

author list (cited authors)

  • Young, C. D., Nadkarni, S., Heh, D., Harris, H. R., Choi, R., Peterson, J. J., ... Bersuker, G.

citation count

  • 13

complete list of authors

  • Young, CD||Nadkarni, S||Heh, D||Harris, HR||Choi, R||Peterson, JJ||Sim, JH||Krishnan, SA||Barnett, J||Vogel, E||Lee, BH||Zeitzoff, P||Brown, GA||Bersuker, G

publication date

  • January 2006