Detection of Electron Trap Generation due to Constant Voltage Stress on High- Gate Stacks
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Positive constant voltage stress combined with charge pumping (CP) measurements was applied to study trap generation phenomena in SiO 2/HfO2/TiN stacks. Using the analysis for frequency-dependent CP data developed to address depth profiling of the electron traps, we have determined that the voltage stress-induced generation of the defects contributing to threshold voltage instability in high- gate stacks occurs primarily within the interfacial SiO2 layer (IL) on the as-grown "precursor" defects most likely caused by the overlaying HfO2 layer. These results point to the IL as a major focus for reliability improvement of high- stacks. 2006 IEEE.
name of conference
2006 IEEE International Reliability Physics Symposium proceedings. 44th Annual
2006 IEEE International Reliability Physics Symposium Proceedings
author list (cited authors)
Young, C. D., Nadkarni, S., Heh, D., Harris, H. R., Choi, R., Peterson, J. J., ... Bersuker, G.
complete list of authors
Young, CD||Nadkarni, S||Heh, D||Harris, HR||Choi, R||Peterson, JJ||Sim, JH||Krishnan, SA||Barnett, J||Vogel, E||Lee, BH||Zeitzoff, P||Brown, GA||Bersuker, G