Detection of Electron Trap Generation due to Constant Voltage Stress on High-κ Gate Stacks Conference Paper uri icon

abstract

  • Positive constant voltage stress combined with charge pumping (CP) measurements was applied to study trap generation phenomena in SiO 2/HfO2/TiN stacks. Using the analysis for frequency-dependent CP data developed to address depth profiling of the electron traps, we have determined that the voltage stress-induced generation of the defects contributing to threshold voltage instability in high-κ gate stacks occurs primarily within the interfacial SiO2 layer (IL) on the as-grown "precursor" defects most likely caused by the overlaying HfO2 layer. These results point to the IL as a major focus for reliability improvement of high-κ stacks. © 2006 IEEE.

author list (cited authors)

  • Young, C. D., Nadkarni, S., Heh, D., Harris, H. R., Choi, R., Peterson, J. J., ... Bersuker, G.

citation count

  • 13

publication date

  • March 2006

publisher