Detection of Electron Trap Generation due to Constant Voltage Stress on High- Gate Stacks Conference Paper

abstract

• Positive constant voltage stress combined with charge pumping (CP) measurements was applied to study trap generation phenomena in SiO 2/HfO2/TiN stacks. Using the analysis for frequency-dependent CP data developed to address depth profiling of the electron traps, we have determined that the voltage stress-induced generation of the defects contributing to threshold voltage instability in high- gate stacks occurs primarily within the interfacial SiO2 layer (IL) on the as-grown "precursor" defects most likely caused by the overlaying HfO2 layer. These results point to the IL as a major focus for reliability improvement of high- stacks. 2006 IEEE.

name of conference

• 2006 IEEE International Reliability Physics Symposium Proceedings

authors

• Harris, Rusty

published proceedings

• 2014 IEEE International Reliability Physics Symposium

author list (cited authors)

• Young, C. D., Nadkarni, S., Heh, D., Harris, H. R., Choi, R., Peterson, J. J., ... Bersuker, G.

citation count

• 13

complete list of authors

• Young, CD||Nadkarni, S||Heh, D||Harris, HR||Choi, R||Peterson, JJ||Sim, JH||Krishnan, SA||Barnett, J||Vogel, E||Lee, BH||Zeitzoff, P||Brown, GA||Bersuker, G

publication date

• January 2006

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE International Reliability Physics Symposium Proceedings  Journal

Digital Object Identifier (DOI)

• 10.1109/relphy.2006.251211

International Standard Book Number (ISBN) 10

• 0780394984

International Standard Book Number (ISBN) 13

• 9780780394988

start page

• 169

end page

• 173

URL

• http://dx.doi.org/10.1109/relphy.2006.251211