Effective work function modification of atomic-layer-deposited-TaN film by capping layer Academic Article

abstract

• We demonstrate that the metallic capping layer has a strong impact on the effective work function (EWF) of the metal gate. Specifically, the EWF of atomic-layer-deposited (ALD)-TaN could be increased from 4.5 to 4.8 eV with chemical-vapor-deposited-TiN capping, which is sufficient amount of work function modification for silicon on insulator based devices. A strong interdiffusion of Ti atoms into the ALD-TaN film is observed and correlated well with the changes in the EWF change. Ti capping experiments confirm that the Ti interdiffusion can actually modify the EWF of Ti/ALD-TaN stack. 2006 American Institute of Physics.

authors

• Harris, Rusty

published proceedings

• Applied Physics Letters

author list (cited authors)

• Choi, K., Alshareef, H. N., Wen, H. C., Harris, H., Luan, H., Senzaki, Y., ... Lee, B. H.

citation count

• 40

complete list of authors

• Choi, K||Alshareef, HN||Wen, HC||Harris, H||Luan, H||Senzaki, Y||Lysaght, P||Majhi, P||Lee, BH

publication date

• July 2006

publisher

• AIP Publishing  Publisher

published in

• Applied Physics Letters  Journal

Digital Object Identifier (DOI)

• 10.1063/1.2234288

start page

• 032113

end page

• 032113

volume

• 89

issue

• 3

URL

• http://dx.doi.org/10.1063/1.2234288