Dipole Model Explaining High-k/Metal Gate Threshold Voltage Tuning
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An interface dipole model explaining threshold voltage (Vt) tuning in HfSiON gated n-channel field effect transistors (nFETs) is proposed. The magnitude of nFET Vt tuning tuning depends on rare earth (RE) type and diffusion in Si/SiOx/HfSiON/REOx cap layer/metal gated nFETs as follows: Sr < Er
author list (cited authors)
Kirsch, P. D., Sivasubramani, P., Huang, J., Young, C. D., Park, C. S., Freeman, K., ... Jammy, R.