Dipole Model Explaining High-k/Metal Gate Threshold Voltage Tuning Conference Paper uri icon

abstract

  • An interface dipole model explaining threshold voltage (Vt) tuning in HfSiON gated n-channel field effect transistors (nFETs) is proposed. Vt tuning depends on rare earth (RE) type and diffusion in Si/SiOx/HfSiON/REOx/metal gated nFETs as follows: Sr < Er < Sc+Er < La < Sc < none. This Vt ordering is very similar to the trends in dopant electronegativity (EN, dipole charge transfer) and ionic radius (r, dipole separation) expected for a interfacial dipole mechanism. The resulting Vt dependence on RE dopant allows distinction between a dipole model (dependent on EN and r) and an oxygen vacancy model (dependent on valence).

published proceedings

  • ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 5: NEW MATERIALS, PROCESSES, AND EQUIPMENT

author list (cited authors)

  • Kirsch, P. D., Sivasubramani, P., Huang, J., Young, C. D., Park, C. S., Freeman, K., ... Jammy, R.

citation count

  • 0

complete list of authors

  • Kirsch, PD||Sivasubramani, P||Huang, J||Young, CD||Park, CS||Freeman, K||Hussain, MM||Bersuker, G||Harris, HR||Majhi, P||Lysaght, P||Tseng, H-H||Lee, BH||Jammy, R

publication date

  • January 2009