Dipole Model Explaining High-k/Metal Gate Threshold Voltage Tuning Conference Paper uri icon

abstract

  • An interface dipole model explaining threshold voltage (Vt) tuning in HfSiON gated n-channel field effect transistors (nFETs) is proposed. The magnitude of nFET Vt tuning tuning depends on rare earth (RE) type and diffusion in Si/SiOx/HfSiON/REOx cap layer/metal gated nFETs as follows: Sr < Er

author list (cited authors)

  • Kirsch, P. D., Sivasubramani, P., Huang, J., Young, C. D., Park, C. S., Freeman, K., ... Jammy, R.

citation count

  • 0

publication date

  • December 2019