HfO2 gate dielectric with 0.5 nm equivalent oxide thickness
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Hafnium dioxide films have been deposited using reactive electron beam evaporation in oxygen on hydrogenated Si(100) surfaces. The capacitance-voltage curves of as-deposited metal(Ti)-insulator-semiconductor structures exhibited large hysteresis and frequency dispersion. With post-deposition annealing in hydrogen at 300°C, the frequency dispersion decreased to less than 1%/decade, while the hysteresis was reduced to 20 mV at flatband. An equivalent oxide thickness of 0.5 nm was achieved for HfO2 thickness of 3.0 nm. We attribute this result to a combination of pristine hydrogen saturated silicon surfaces, room temperature dielectric deposition, and low temperature hydrogen annealing. © 2002 American Institute of Physics.
author list (cited authors)
Harris, H., Choi, K., Mehta, N., Chandolu, A., Biswas, N., Kipshidze, G., ... Temkin, H.