PECVD Silicon Nitride Passivation of AlGaN/GaN Heterostructures Academic Article

abstract

• This paper investigates the optimization of PECVD alpha -SiN-passivated AlGaN/GaN heterostructures to achieve higher 2-D electron gas (2DEG) densities and lower the electric fields residing in the AlGaN barrier layer. A model is developed to calculate the 2DEG density of passivated AlGaN/GaN heterostructures taking into account the piezoelectric and spontaneous polarization effects together with strain relaxation. The model is validated with 2DEG measurements and data from the literature. The optimized passivation layer thickness is calculated for different Al mole fractions and AlGaN thicknesses to achieve targeted 2DEG densities and polarization electric field. Fabrication of samples with different alpha-SiN thicknesses and effects of postannealing on 2DEG density are reported. The model accurately predicts the experimental results. 1963-2012 IEEE.

authors

• Harris, Rusty

published proceedings

• IEEE TRANSACTIONS ON ELECTRON DEVICES

author list (cited authors)

• Gatabi, I. R., Johnson, D. W., Woo, J. H., Anderson, J. W., Coan, M. R., Piner, E. L., & Harris, H. R.

citation count

• 27

complete list of authors

• Gatabi, Iman Rezanezhad||Johnson, Derek W||Woo, Jung Hwan||Anderson, Jonathan W||Coan, Mary R||Piner, Edwin L||Harris, Harlan Rusty

publication date

• March 2013

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE Transactions on Electron Devices  Journal

keywords

• Gallium Nitride
• Passivation
• Piezoelectric Polarization
• Spontaneous Polarization

Digital Object Identifier (DOI)

• 10.1109/TED.2013.2242075

start page

• 1082

end page

• 1087

volume

• 60

issue

• 3

URL

• http%3A%2F%2Fdx.doi.org%2F10.1109%2Fted.2013.2242075