publication venue for
- A Solid-State Thin-Film Incandescent Light-Emitting Device. 62:3536-3540. 2015
- Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology. 60:3197-3203. 2013
- PECVD Silicon Nitride Passivation of AlGaN/GaN Heterostructures. 60:1082-1087. 2013
- Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-k/Metal Gates CMOS FinFETs for Multi-V-Th Engineering. 57:626-631. 2010
- TCAD/Physics-Based Analysis of High-Density Dual-BOX FD/SOI SRAM Cell With Improved Stability. 56:3033-3040. 2009
- Low-power high-performance asymmetrical double-gate circuits using back-gate-controlled wide-tunable-range diode voltage. 54:2263-2268. 2007
- Design and Modeling of a Micromachined High-$Q$ Tunable Capacitor With Large Tuning Range and a Vertical Planar Spiral Inductor. 50:730-739. 2003
- Noise in high T/sub c/ superconductors. 41:2112-2122. 1994
- GIGATRON. 36:2720-2727. 1989
- EFFICIENT MICROWAVE OSCILLATION IN A MULTILAYERED BARITT DIODE STRUCTURE 1975