Initial growth of interfacial oxide during deposition of HfO2 on silicon
- Additional Document Info
- View All
The interfacial chemistry of Hf/Si, HfO 2/SiO 2/Si and HfO 2/Si were discussed using x-ray photoelectron spectroscopy. It was found that the deposition of Hf and HfO 2 films was carried out on Si wafers by electron-beam evaporation with oxygen backfill. The interfacial layer formation took place predominantly at the initial stage of the HfO 2 film deposition. Analysis shows that a more complete hydrogen termination and atomically smoother surface delays the onset of interfacial layer formation.
author list (cited authors)
Choi, K., Temkin, H., Harris, H., Gangopadhyay, S., Xie, L., & White, M.