Initial growth of interfacial oxide during deposition of HfO2 on silicon

abstract

• The interfacial chemistry of Hf/Si, HfO 2/SiO 2/Si and HfO 2/Si were discussed using x-ray photoelectron spectroscopy. It was found that the deposition of Hf and HfO 2 films was carried out on Si wafers by electron-beam evaporation with oxygen backfill. The interfacial layer formation took place predominantly at the initial stage of the HfO 2 film deposition. Analysis shows that a more complete hydrogen termination and atomically smoother surface delays the onset of interfacial layer formation.

authors

• Harris, Rusty

published proceedings

• Applied Physics Letters

altmetric score

• 3

author list (cited authors)

• Choi, K., Temkin, H., Harris, H., Gangopadhyay, S., Xie, L., & White, M.

citation count

• 24

complete list of authors

• Choi, K||Temkin, H||Harris, H||Gangopadhyay, S||Xie, L||White, M

publication date

• July 2004

publisher

• AIP Publishing  Publisher

published in

• Applied Physics Letters  Journal

Digital Object Identifier (DOI)

• 10.1063/1.1771457

start page

• 215

end page

• 217

volume

• 85

issue

• 2

URL

• http://dx.doi.org/10.1063/1.1771457