New Hot-Carrier Injection Mechanism at Source Side in Nanoscale Floating-Body MOSFETs Academic Article

abstract

• A new hot-carrier injection mechanism that depends on gate bias and body thickness in nanoscale floating-body MOSFETs has been identified using 2-D device simulation and hot-carrier degradation measurements. When gate voltage is sufficiently high and the body thickness is thin, the potential of the floating body is elevated due to the ohmic voltage drop at the source extension (SE), resulting in impact ionization at the SE. Hot-carrier stress with accelerated gate voltage may lead to a huge overestimation of lifetime in nanoscale floating-body MOSFETs. 2008 IEEE.

authors

• Harris, Rusty

published proceedings

• IEEE Electron Device Letters

author list (cited authors)

• Yang, J., Harris, H. R., Bersuker, G., Kang, C. Y., Oh, J., Lee, B. H., Tseng, H., & Jammy, R.

citation count

• 1

complete list of authors

• Yang, J-W||Harris, HR||Bersuker, G||Kang, CY||Oh, J||Lee, BH||Tseng, H-H||Jammy, R

publication date

• January 2009

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE Electron Device Letters  Journal

Digital Object Identifier (DOI)

• 10.1109/led.2008.2007661

start page

• 54

end page

• 56

volume

• 30

issue

• 1

URL

• http://dx.doi.org/10.1109/led.2008.2007661