Flexible, Simplified CMOS on Si(110) with Metal Gate / High κ for HP and LSTP
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We examine and demonstrate the benefit of high κ and metal gate on Si(110) orientation-only CMOS devices and demonstrate not only good PMOS but competitive NMOS device performance. It is shown that high k / metal gates on NMOS Si(110) surface have higher than expected performance due to velocity saturation of minority carriers. Improvement in source/drain extension results in nearly symmetric CMOS output characteristics with no stress enhancement. Examining potential circuit impact reveals that the Si(110) surface provides a significant improvement in performance for HP and LSTP without large process complexity associated with mixed orientation CMOS approaches. © 2007 IEEE.
author list (cited authors)
Harris, H. R., Thompson, S. E., Krishnan, S., Kirsch, P., Majhi, P., Smith, C. E., ... Jammy, R.