Flexible, simplified CMOS on Si(110) with metal gate / high k for HP and LSTP Conference Paper uri icon

abstract

  • We examine and demonstrate the benefit of high and metal gate on Si(110) orientation-only CMOS devices and demonstrate not only good PMOS but competitive NMOS device performance. It is shown that high k / metal gates on NMOS Si(110) surface have higher than expected performance due to velocity saturation of minority carriers. Improvement in source/drain extension results in nearly symmetric CMOS output characteristics with no stress enhancement. Examining potential circuit impact reveals that the Si(110) surface provides a significant improvement in performance for HP and LSTP without large process complexity associated with mixed orientation CMOS approaches. 2007 IEEE.

name of conference

  • 2007 IEEE International Electron Devices Meeting

published proceedings

  • 2007 IEEE International Electron Devices Meeting

author list (cited authors)

  • Harris, H. R., Thompson, S. E., Krishnan, S., Kirsch, P., Majhi, P., Smith, C. E., ... Jammy, R.

citation count

  • 6

complete list of authors

  • Harris, HR||Thompson, SE||Krishnan, S||Kirsch, P||Majhi, P||Smith, CE||Hussain, MM||Sun, G||Adhikari, H||Suthram, S||Lee, BH||Tseng, H-H||Jammy, R

publication date

  • December 2007

publisher