HIGH MOBILITY SIGE SHELL-SI CORE OMEGA GATE PFETS
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Omega gate type pFETs with SiGe shell-Si core are demonstrated that show 30% mobility enhancement for (110) oriented fins and 46% mobility enhancement for (100) oriented fins compared to Si omega gate devices. Performance improvement is demonstrated because of higher mobility and inherent epitaxial strain, while the external resistance in the two SiGe and Si omega FETs is comparable. Performance can further be improved by uniaxial compressive stress. ©2009 IEEE.
author list (cited authors)
Adhikari, H., Harris, H. R., Smith, C. E., Yang, J., Coss, B., Parthasarathy, S., ... Jammy, R.