High Performance pMOSFETs using Si/Si1-xGex/Si Quantum Wells with High-k/Metal Gate Stacks and Additive Uniaxial Strain for 22 nm Technology Node Conference Paper

abstract

• We demonstrate for the first time that both SiGe and Ge channel with high-k/metal gate stack pMOSFETs show similar uniaxial stress enhanced drive current as Si which is expected from k.p calculations. We also demonstrate experimentally that pMOSFETs with strained quantum wells (QW) in the Si-Ge system exhibited high performance and low off-state leakage comparable to optimized gate stacks on Si. These results significantly hasten the feasibility of realizing SiGe or Ge channel pMOSFETs for 22 nm and beyond. 2007 IEEE.

name of conference

• 2007 IEEE International Electron Devices Meeting

authors

• Harris, Rusty

published proceedings

• 2007 IEEE International Electron Devices Meeting

author list (cited authors)

• Suthram, S., Majhi, P., Sun, G., Kalra, P., Harris, H. R., Choi, K. J., ... Jammy, R.

citation count

• 14

complete list of authors

• Suthram, S||Majhi, P||Sun, G||Kalra, P||Harris, HR||Choi, KJ||Heh, D||Oh, J||Kelly, D||Choi, R||Cho, BJ||Hussain, MM||Smith, C||Banerjee, S||Tsai, W||Thompson, SE||Tseng, HH||Jammy, R

publication date

• January 2007

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• International Electron Devices Meeting  Journal

Digital Object Identifier (DOI)

• 10.1109/iedm.2007.4419049

start page

• 727

end page

• 730

URL

• http://dx.doi.org/10.1109/iedm.2007.4419049