Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning
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An interface dipole model explaining threshold voltage (Vt) tuning in HfSiON gated n -channel field effect transistors (nFETs) is proposed. Vt tuning depends on rare earth (RE) type and diffusion in SiSi Ox HfSiON REOx /metal gated nFETs as follows: Sr