Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning uri icon

abstract

  • An interface dipole model explaining threshold voltage (Vt) tuning in HfSiON gated n -channel field effect transistors (nFETs) is proposed. Vt tuning depends on rare earth (RE) type and diffusion in SiSi Ox HfSiON REOx /metal gated nFETs as follows: Sr

published proceedings

  • Applied Physics Letters

author list (cited authors)

  • Kirsch, P. D., Sivasubramani, P., Huang, J., Young, C. D., Quevedo-Lopez, M. A., Wen, H. C., ... Kingon, A. I.

citation count

  • 153

complete list of authors

  • Kirsch, PD||Sivasubramani, P||Huang, J||Young, CD||Quevedo-Lopez, MA||Wen, HC||Alshareef, H||Choi, K||Park, CS||Freeman, K||Hussain, MM||Bersuker, G||Harris, HR||Majhi, P||Choi, R||Lysaght, P||Lee, BH||Tseng, H-H||Jammy, R||Böscke, TS||Lichtenwalner, DJ||Jur, JS||Kingon, AI

publication date

  • March 2008