Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning Academic Article uri icon

abstract

  • An interface dipole model explaining threshold voltage (Vt) tuning in HfSiON gated n -channel field effect transistors (nFETs) is proposed. Vt tuning depends on rare earth (RE) type and diffusion in SiSi Ox HfSiON REOx /metal gated nFETs as follows: Sr

author list (cited authors)

  • Kirsch, P. D., Sivasubramani, P., Huang, J., Young, C. D., Quevedo-Lopez, M. A., Wen, H. C., ... Kingon, A. I.

citation count

  • 144

publication date

  • March 2008