High quality AlN for deep UV photodetectors Academic Article

abstract

• We have prepared large-area, 0.500.55 mm2, metal-semiconductor-metal photodetectors based on AlN layers with different density of inversion domains (IDs). AlN layers were grown on (0001) sapphire substrates using gas source molecular beam epitaxy. The introduction of AlN/GaN short period superlattices after growth of AlN nucleation layer yields significant reduction in the ID density. Photodetectors with ID density of 106 cm-2 exhibit a very low dark current of 0.5 fA at zero bias, which remains below 50 fA up to a bias of 30 V. The peak responsivity of 0.08 A/W was obtained at a wavelength of 202 nm. 2009 American Institute of Physics.

authors

• Harris, Rusty

published proceedings

• APPLIED PHYSICS LETTERS

author list (cited authors)

• Nikishin, S., Borisov, B., Pandikunta, M., Dahal, R., Lin, J. Y., Jiang, H. X., Harris, H., & Holtz, M.

citation count

• 42

complete list of authors

• Nikishin, S||Borisov, B||Pandikunta, M||Dahal, R||Lin, JY||Jiang, HX||Harris, H||Holtz, M

publication date

• January 2009

publisher

• AIP Publishing  Publisher

published in

• Applied Physics Letters  Journal

keywords

• Aluminium Compounds
• Dark Conductivity
• Iii-v Semiconductors
• Metal-semiconductor-metal Structures
• Molecular Beam Epitaxial Growth
• Nucleation
• Photodetectors
• Semiconductor Growth
• Semiconductor Superlattices
• Ultraviolet Detectors

Digital Object Identifier (DOI)

• 10.1063/1.3200229

start page

• 054101

end page

• 054101

volume

• 95

issue

• 5

URL

• http%3A%2F%2Fdx.doi.org%2F10.1063%2F1.3200229