Metal gate work function engineering using AlNx interfacial layers
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Metal gate work function enhancement using thin AlN x interfacial layers has been evaluated. It was found that band edge effective work functions (∼5.10 eV) can be achieved on hafnium-based high dielectric constant (high-k) materials using the AlN x interfacial layer and TiSiN electrodes. It was also found that the effective work function enhancement by the AlN x interfacial layer increased when the concentration of SiO 2 in the gate dielectric was increased. Thus, the enhancement was minimal for HfO 2 and maximum for SiO 2. A model is proposed to explain these results and a bonding analysis is presented to support the proposed model. © 2006 American Institute of Physics.
author list (cited authors)
Alshareef, H. N., Luan, H. F., Choi, K., Harris, H. R., Wen, H. C., Quevedo-Lopez, M. A., Majhi, P., & Lee, B. H.