Metal gate work function engineering using AlNx interfacial layers Academic Article

abstract

• Metal gate work function enhancement using thin AlN x interfacial layers has been evaluated. It was found that band edge effective work functions (5.10 eV) can be achieved on hafnium-based high dielectric constant (high-k) materials using the AlN x interfacial layer and TiSiN electrodes. It was also found that the effective work function enhancement by the AlN x interfacial layer increased when the concentration of SiO 2 in the gate dielectric was increased. Thus, the enhancement was minimal for HfO 2 and maximum for SiO 2. A model is proposed to explain these results and a bonding analysis is presented to support the proposed model. 2006 American Institute of Physics.

authors

• Harris, Rusty

published proceedings

• Applied Physics Letters

author list (cited authors)

• Alshareef, H. N., Luan, H. F., Choi, K., Harris, H. R., Wen, H. C., Quevedo-Lopez, M. A., Majhi, P., & Lee, B. H.

citation count

• 48

complete list of authors

• Alshareef, HN||Luan, HF||Choi, K||Harris, HR||Wen, HC||Quevedo-Lopez, MA||Majhi, P||Lee, BH

publication date

• March 2006

publisher

• AIP Publishing  Publisher

published in

• Applied Physics Letters  Journal

Digital Object Identifier (DOI)

• 10.1063/1.2186517

start page

• 112114

end page

• 112114

volume

• 88

issue

• 11

URL

• http://dx.doi.org/10.1063/1.2186517