RF Dielectric Loss Due to MOCVD Aluminum Nitride on High Resistivity Silicon Academic Article uri icon

abstract

  • © 1963-2012 IEEE. The contribution of high-frequency losses from an aluminum nitride (AlN) layer on high resistivity silicon (Si) is reported. The AlN, deposited on silicon via metalorganic chemical vapor phase deposition as a nucleation layer for subsequent gallium nitride growth, is analyzed for its contribution to the dielectric losses from 6-20 GHz and differentiated from the loss due to the p-type layer formed in the silicon substrate. It is found that AlN is a stronger contributor to overall dielectric loss in comparison with the silicon substrate.

author list (cited authors)

  • Berber, F., Johnson, D. W., Sundqvist, K. M., Piner, E. L., Huff, G. H., & Harris, H. R.

citation count

  • 10

publication date

  • February 2017