RF Dielectric Loss Due to MOCVD Aluminum Nitride on High Resistivity Silicon Academic Article

abstract

• 1963-2012 IEEE. The contribution of high-frequency losses from an aluminum nitride (AlN) layer on high resistivity silicon (Si) is reported. The AlN, deposited on silicon via metalorganic chemical vapor phase deposition as a nucleation layer for subsequent gallium nitride growth, is analyzed for its contribution to the dielectric losses from 6-20 GHz and differentiated from the loss due to the p-type layer formed in the silicon substrate. It is found that AlN is a stronger contributor to overall dielectric loss in comparison with the silicon substrate.

authors

• Harris, Rusty

published proceedings

• IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

author list (cited authors)

• Berber, F., Johnson, D. W., Sundqvist, K. M., Piner, E. L., Huff, G. H., & Harris, H. R.

citation count

• 14

complete list of authors

• Berber, Feyza||Johnson, Derek W||Sundqvist, Kyle M||Piner, Edwin L||Huff, Gregory H||Harris, H Rusty

publication date

• May 2017

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE Transactions on Microwave Theory and Techniques  Journal

keywords

• Algan/gan Heterostructure Field-effect Transistor (hfets)
• Aluminum Nitride (aln) Dielectric Loss
• Gallium Nitride (gan) Hemt Rf Loss
• Metalorganic Chemical Vapor Phase Deposition (mocvd) Gan-on-si

Digital Object Identifier (DOI)

• 10.1109/TMTT.2017.2656865

start page

• 1465

end page

• 1470

volume

• 65

issue

• 5

URL

• http%3A%2F%2Fdx.doi.org%2F10.1109%2Ftmtt.2017.2656865