Design Considerations to Enhance the Modulation Efficiency and Cutoff Frequency of AlGaN/InGaN/GaN HEMTs Conference Paper

abstract

• This paper investigates the optimization of design parameters to achieve enhanced modulation efficiency and cutoff frequency in AlGaN/InGaN/GaN HEMTs. The frequency dependent current gain of the device is simulated for different AlGaN thicknesses, taking into account the polarization fields and strain effects. The implementation of an underlap junction is discussed and it is demonstrated that the underlap improves the channel velocity so that current gain cutoff frequency-gate length product of 19.45 GHz-m can be realized. 2013 IEEE.

name of conference

• 2013 8th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)

authors

• Harris, Rusty

published proceedings

• 2013 8TH INTERNATIONAL CONFERENCE ON DESIGN & TECHNOLOGY OF INTEGRATED SYSTEMS IN NANOSCALE ERA (DTIS)

author list (cited authors)

• Gatabi, I. R., Johnson, D. W., Woo, J. H., Babb, M. E., & Harris, H. R.

citation count

• 0

complete list of authors

• Gatabi, Iman Rezanezhad||Johnson, Derek W||Woo, Jung Hwan||Babb, Michael E||Harris, H Rusty

publication date

• January 2013

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

keywords

• Aluminum Gallium Nitride
• Cutoff Frequency
• Gallium Nitride
• Modulation

Digital Object Identifier (DOI)

• 10.1109/dtis.2013.6527779

International Standard Book Number (ISBN) 13

• 978-1-4673-6039-5

start page

• 62

end page

• 67

volume

• 1

URL

• http://dx.doi.org/10.1109/dtis.2013.6527779