Simplified manufacturable band edge metal gate solution for NMOS without a capping layer Conference Paper

abstract

• We describe an NMOS band edge solution that uses a metal gate doped with Lanthanide elements to achieve work functions as low as 4.05eV The capping interlayers used in previous works are no longer necessary, and metal gate implementation became much simpler. Using this electrode, low Vth value and high mobility suitable for high performance devices are achieved at a practical EOT 0f 8.

name of conference

• 2006 International Electron Devices Meeting

authors

• Harris, Rusty

published proceedings

• 2006 International Electron Devices Meeting

altmetric score

• 6

author list (cited authors)

• Harris, H. R., Alshareef, H., Wen, H. C., Krishnan, S., Choi, K., Luan, H., ... Jammy, R.

citation count

• 7

complete list of authors

• Harris, HR||Alshareef, H||Wen, HC||Krishnan, S||Choi, K||Luan, H||Heh, D||Park, CS||Park, HB||Hussain, M||Ju, BS||Kirsch, PD||Song, SC||Majhi, P||Lee, BH||Jammy, R

publication date

• January 2006

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• International Electron Devices Meeting  Journal

Digital Object Identifier (DOI)

• 10.1109/iedm.2006.346863

International Standard Book Number (ISBN) 10

• 1424404398

International Standard Book Number (ISBN) 13

• 9781424404391

start page

• 1

end page

• 4

URL

• http://dx.doi.org/10.1109/iedm.2006.346863