publication venue for
- Device and Reliability Improvement of HfSiON+LaOx/Metal Gate Stacks for 22nm Node Application 2008
- Flexible, Simplified CMOS on Si(110) with Metal Gate / High for HP and LSTP 2007
- High Performance pMOSFETs using Si/Si1-xGex/Si Quantum Wells with High-k/Metal Gate Stacks and Additive Uniaxial Strain for 22 nm Technology Node 2007
- High Performing pMOSFETs on Si(110) for Application to Hybrid Orientation Technologies - Comparison of Hf02 and HfSiON 2006
- Simplified manufacturable band edge metal gate solution for NMOS without a capping layer 2006
- Development of a wide tuning range MEMS tunable capacitor for wireless communication systems 2000
- Porous silicon electron-emitting source 1990