Porous silicon electron-emitting source Conference Paper

abstract

• A novel material which consists of porous silicon on silicon has been used to demonstrate high-current, low-voltage electron field emission. The porous silicon film is grown on a silicon wafer through electrochemical anodization in concentrated hydrofluoric acid. Apparently extremely sharp silicon tips are formed at the silicon/porous silicon interface which allow low field extraction of electrons from the substrate. Evidence confirming electron vacuum transport from this electron-emitting source is presented.

authors

• Weichold, Mark

published proceedings

• Technical Digest - International Electron Devices Meeting

author list (cited authors)

• Yue, W. K., Parker, D. L., & Weichold, M. H.

complete list of authors

• Yue, WK||Parker, DL||Weichold, MH

publication date

• December 1990

published in

• International Electron Devices Meeting  Journal

start page

• 167

end page

• 170