Porous silicon electron-emitting source
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A novel material which consists of porous silicon on silicon has been used to demonstrate high-current, low-voltage electron field emission. The porous silicon film is grown on a silicon wafer through electrochemical anodization in concentrated hydrofluoric acid. Apparently extremely sharp silicon tips are formed at the silicon/porous silicon interface which allow low field extraction of electrons from the substrate. Evidence confirming electron vacuum transport from this electron-emitting source is presented.
Technical Digest - International Electron Devices Meeting
author list (cited authors)
Yue, W. K., Parker, D. L., & Weichold, M. H.
complete list of authors
Yue, WK||Parker, DL||Weichold, MH