Self-Aligned Contact Metallization to AlGaN/GaN Heterostructures
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2017 IEEE. Nitride device scaling and large scale integration requires the increased manufacturability of self-aligned processes. To date, excellent contacts to GaN heterostructures with 2DEG are achieved through lithographically-defined metallization , despite the so-called self-aligned regrowth processes used [2,3]. We have developed a novel self-aligned contact metallization process using Titanium to make ohmic contacts (RC = 0.36 -mm) to AlGaN/GaN hetero-structures. After metal selection experiments, the field dielectric, selective wet etch chemistry, surface pre-treatment and ohmic anneal are engineered to realize the salicide-like process. A CHF3+O2 surface pre-treatment is found to be vital to implementation of the self-aligned contact. Gate-last transistor devices demonstrate the feasibility of the unique process module. These results demonstrate the first truly self-aligned contact module for AlGaN/GaN 2DEG devices.
name of conference
2017 75th Annual Device Research Conference (DRC)
2017 75TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC)
author list (cited authors)
Johnson, D., Babb, M., Ravikirthi, P., Suh, J. W., & Harris, H. R.
complete list of authors
Johnson, Derek||Babb, Michael||Ravikirthi, Pradhyumna||Suh, Jae Woo||Harris, H Rusty