Self-Aligned Contact Metallization to AlGaN/GaN Heterostructures Conference Paper uri icon

abstract

  • 2017 IEEE. Nitride device scaling and large scale integration requires the increased manufacturability of self-aligned processes. To date, excellent contacts to GaN heterostructures with 2DEG are achieved through lithographically-defined metallization [1], despite the so-called self-aligned regrowth processes used [2,3]. We have developed a novel self-aligned contact metallization process using Titanium to make ohmic contacts (RC = 0.36 -mm) to AlGaN/GaN hetero-structures. After metal selection experiments, the field dielectric, selective wet etch chemistry, surface pre-treatment and ohmic anneal are engineered to realize the salicide-like process. A CHF3+O2 surface pre-treatment is found to be vital to implementation of the self-aligned contact. Gate-last transistor devices demonstrate the feasibility of the unique process module. These results demonstrate the first truly self-aligned contact module for AlGaN/GaN 2DEG devices.

name of conference

  • 2017 75th Annual Device Research Conference (DRC)

published proceedings

  • 2017 75TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC)

author list (cited authors)

  • Johnson, D., Babb, M., Ravikirthi, P., Suh, J. W., & Harris, H. R.

citation count

  • 0

complete list of authors

  • Johnson, Derek||Babb, Michael||Ravikirthi, Pradhyumna||Suh, Jae Woo||Harris, H Rusty

publication date

  • January 1, 2017 11:11 AM