Detecting CH4 and CO Gases Using Micro-Structural Doping Compound Oxide Films on Si-Substrates
Additional Document Info
The gas-sensing films used in commercial gas sensors are deposited on an insulating Al2O3-substrate. In order to improve the gas sensing properties such as the selectivity to CH4and CO, long-term thermal stability, low power consumption and consistency, the micro-structural doping compound oxide gas sensing films (Ti/SnO2) on Si-substrates have been deposited by using the radio frequency magnetron co-sputtering technique with composite target and annealed at high temperature. The gas sensing materials structure, size and image are examined by XRD and SEM, respectively. This paper presents the effect of gas sensing film characteristics on gas sensing properties. A significant effort is devoted to exploring reactive mechanism between Si-based microstructure doping compound oxide gas sensing materials and CH4/CO based on the study of microstructure, the chemical composition of the gas sensing material ion store layer and the ion conduction layer and interface condition between them.