A biased percolation model for the analysis of electronic-device degradation Conference Paper

abstract

• The biased percolation model is proposed for investigating device degradation and failure associated with the generation of defects due to local Joule heating. The degradation process of a thin film is monitored by the evolution of damage pattern, current distribution, macroscopic sample resistance and its fluctuations, defect concentration and device lifetime. The conductor-insulator (CI) and conductor-superconductor (CS) like degradation processes are considered. The results can be used to propose non-destructive indicators for testing the reliability of samples and to interpret experiments.

name of conference

• 1997 21st International Conference on Microelectronics. Proceedings

authors

• Kish, Laszlo

published proceedings

• 1997 21st International Conference on Microelectronics. Proceedings

author list (cited authors)

• Gingl, Z., Pennetta, C., Kiss, L. B., & Reggiani, L.

citation count

• 0

complete list of authors

• Gingl, Z||Pennetta, C||Kiss, LB||Reggiani, L

publication date

• January 1997

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

keywords

• Current Distribution
• Degradation
• Electric Resistance
• Fluctuations
• Heating
• Insulation
• Resistors
• Substrates
• Thin Film Devices
• Voltage

Digital Object Identifier (DOI)

• 10.1109/icmel.1997.632925

start page

• 651-654 vol.2

end page

• 654 vol.2

volume

• 2

URL

• http://dx.doi.org/10.1109/icmel.1997.632925