A biased percolation model for the analysis of electronic-device degradation
Additional Document Info
The biased percolation model is proposed for investigating device degradation and failure associated with the generation of defects due to local Joule heating. The degradation process of a thin film is monitored by the evolution of damage pattern, current distribution, macroscopic sample resistance and its fluctuations, defect concentration and device lifetime. The conductor-insulator (CI) and conductor-superconductor (CS) like degradation processes are considered. The results can be used to propose non-destructive indicators for testing the reliability of samples and to interpret experiments.
name of conference
1997 21st International Conference on Microelectronics. Proceedings