c-erbB-2 Sensing Using AlGaN/GaN High Electron Mobility Transistors For Breast Cancer Detection Academic Article uri icon


  • Antibody-functionalized, Au-gated AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect c-erbB-2, a breast cancer marker. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN/GaN HEMT drain-source current showed a rapid response of less than 5 seconds when target c-erbB-2 antigen in a buffer at clinically relevant concentrations was added to the antibody-immobilized surface. We could detect a range of concentrations from to 16.7 g/ml to 0.25 g/ml. These results clearly demonstrate the promise of portable electronic biological sensors based on AlGaN/GaN HEMTs for breast cancer screening.

published proceedings

  • ECS Transactions

author list (cited authors)

  • Chen, K., Kang, B. S., Wang, H. T., Lele, T. P., Ren, F., Wang, Y. L., ... Linthicum, K. J.

citation count

  • 0

complete list of authors

  • Chen, Ke-Hung||Kang, Byoung Sam||Wang, HT||Lele, TP||Ren, F||Wang, YL||Chang, CY||Pearton, Stephen J||Dennis, DM||Johnson, JW||Rajagopal, P||Roberts, JC||Piner, EL||Linthicum, KJ

publication date

  • May 2009