Influence of oxides on friction during Cu CMP Academic Article

abstract

• In this work, we investigated the frictional behavior of copper CMP. Using a laboratory polishing set up, we polished Cu with designed polishing media. After that the copper surface and the fumed silica particles Cu were analyzed. The surface analysis techniques used are the field emission SEM, the field-emission high-resolution analytical TEM, x-ray spectroscopy, and XPS. We found evident difference in friction value using different polishing media. Discussions lead to three mechanisms during copper CMP. The nature of copper oxides has a profound influence on friction and might be directly related to defects.

authors

• Liang, Hong

published proceedings

• Journal of Electronic Materials

author list (cited authors)

• Liang, H., Martin, J., & Lee, R.

citation count

• 35

complete list of authors

• Liang, Hong||Martin, Jean-Michel||Lee, Richard

publication date

• April 2001

publisher

• Springer Nature  Publisher

published in

• Journal of Electronic Materials  Journal

Digital Object Identifier (DOI)

• 10.1007/s11664-001-0049-4

start page

• 391

end page

• 395

volume

• 30

issue

• 4

URL

• http://dx.doi.org/10.1007/s11664-001-0049-4