Electrical Characterization of the Graphene-SiC Heterojunction Conference Paper uri icon


  • Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.

published proceedings

  • Materials Science Forum

author list (cited authors)

  • Anderson, T. J., Hobart, K. D., Nyakiti, L. O., Wheeler, V. D., Myers-Ward, R. L., Caldwell, J. D., ... Imhoff, E. A.

citation count

  • 0

complete list of authors

  • Anderson, Travis J||Hobart, Karl D||Nyakiti, Luke O||Wheeler, Virginia D||Myers-Ward, Rachael L||Caldwell, Joshua D||Bezares, Francisco J||Gaskill, D Kurt||Eddy, Charles R||Kub, Francis J||Jernigan, Glenn G||Tadjer, MJ||Imhoff, Eugene A

publication date

  • May 2012