Managing Basal Plane Dislocations in SiC: Perspective and Prospects Conference Paper uri icon

abstract

  • Conversion of basal plane dislocations (BPDs) to threading edge dislocations in 8 and 4{degree sign} offcut SiC material has been studied in order to eliminate the nucleation source of Shockley-type stacking faults in the active region of bipolar devices. Ex situ and in situ growth interrupts were used to convert BPDs in the 8{degree sign} material, where conversion rates up to 98% were achieved for in situ interrupts in epilayers with doping < 1x1016 cm-3. Complete spontaneous conversion of BPDs was found to be possible in 4{degree sign} offcut material after ~ 20 m of epitaxial growth for both intentionally and unintentionally doped films.

published proceedings

  • GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 2

altmetric score

  • 3

author list (cited authors)

  • Myers-Ward, R. L., Gaskill, D. K., Stahlbush, R. S., Mahadik, N. A., Wheeler, V. D., Nyakiti, L. O., & Eddy, C.

citation count

  • 5

complete list of authors

  • Myers-Ward, RL||Gaskill, DK||Stahlbush, RS||Mahadik, NA||Wheeler, VD||Nyakiti, LO||Eddy, CR Jr

publication date

  • January 1, 2012 11:11 AM