Managing Basal Plane Dislocations in SiC: Perspective and Prospects
- Additional Document Info
- View All
Conversion of basal plane dislocations (BPDs) to threading edge dislocations in 8 and 4° offcut SiC material has been studied in order to eliminate the nucleation source of Shockley-type stacking faults in the active region of bipolar devices. Ex situ and in situ growth interrupts were used to convert BPDs in the 8° material, where conversion rates up to 98% were achieved for in situ interrupts in epilayers with doping < 1x1016 cm-3. Complete spontaneous conversion of BPDs was found to be possible in 4° offcut material after ∼ 20 μm of epitaxial growth for both intentionally and unintentionally doped films. © The Electrochemical Society.
author list (cited authors)
Myers-Ward, R., Gaskill, D. K., Stahlbush, R. S., Mahadik, N. A., Wheeler, V., Nyakiti, L. O., & Eddy, C. R.