The design and implementation of a low-overhead supply-gated SRAM Conference Paper

abstract

• We report a virtual supply domain control technique for low-leakage SRAMs. This method encompasses cell-based sleep circuit tiling, sequentially regulated poweron/off, and flexible domain interfacing. The usual overhead associated with driving sleep transistors is significantly reduced by powering on/off gradually. Over 26Ox and 3x leakage reduction is observed in 65nm-technology hardware for hard and soft gating, respectively, including the leakage of control and drive circuits. Measured virtual domain power-on latency is compatible with high-frequency designs. 2006 IEEE.

name of conference

• 2006 Proceedings of the 32nd European Solid-State Circuits Conference

authors

• Nowka, Kevin

published proceedings

• ESSCIRC 2006: PROCEEDINGS OF THE 32ND EUROPEAN SOLID-STATE CIRCUITS CONFERENCE

author list (cited authors)

• Kuang, J. B., Ngo, H. C., Nowka, K. J., Ehrenreich, S., Drake, A. J., Pille, J., ... Vo, I.

citation count

• 2

complete list of authors

• Kuang, JB||Ngo, HC||Nowka, KJ||Ehrenreich, S||Drake, AJ||Pille, J||Kosonocky, S||Joshi, R||Nguyen, T||Vo, I

publication date

• January 2006

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• European Solid-State Circuits Conference  Journal

keywords

• 40 Engineering
• 4008 Electrical Engineering
• 4009 Electronics, Sensors And Digital Hardware
• 7 Affordable And Clean Energy
• Sleep Research

Digital Object Identifier (DOI)

• 10.1109/esscir.2006.307587

International Standard Book Number (ISBN) 10

• 1424403022

International Standard Book Number (ISBN) 13

• 978-1-4244-0302-8

start page

• 287

end page

• +

URL

• http://dx.doi.org/10.1109/esscir.2006.307587

user-defined tag

• 7 Affordable and Clean Energy