Indentation-induced phase transformations in silicon: influences of load, rate and indenter angle on the transformation behavior uri icon

abstract

  • Nanoindentation has been used widely to study pressure-induced phase transformations in Si. Here, a new aspect of the behavior is examined by making nanoindentations on (1 0 0) single crystals using a series of triangular pyramidal indenters with centerline-to-face angles varying from 35.3to 85.0. Effects of indenter angle, maximum load, and loading/unloading rate are systematically characterized from nanoindentation load-displacement data in conjunction with micro-Raman imaging spectroscopy of the residual hardness impressions. Results are discussed in terms of prevailing ideas and models for indentation-induced phase transformations in silicon. 2005 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

published proceedings

  • Acta Materialia

author list (cited authors)

  • Jang, J., Lance, M. J., Wen, S., Tsui, T. Y., & Pharr, G. M.

citation count

  • 264

complete list of authors

  • Jang, Jae-il||Lance, MJ||Wen, Songqing||Tsui, Ting Y||Pharr, GM

publication date

  • April 2005